An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.

An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.

The present disclosure provides a photodiode, a display substrate, and manufacturing methods thereof, and a display device. The method for manufacturing the photodiode includes: forming a semiconductor material layer on a base substrate in a non-display region of a display substrate, the semiconductor material layer including a first contact area, a second contact area, and a semiconductor area sandwiched therebetween; processing the first contact area of the semiconductor material layer to form a first contact electrode; processing portions of the semiconductor material layer and the second contact area away from the base substrate in the semiconductor area, to form a first semiconductor layer and a second semiconductor layer stacked, the second semiconductor layer being located on a side of the first semiconductor layer away from the base substrate; and processing the second semiconductor layer in the second contact area to form a second contact electrode.

The present disclosure provides a photodiode, a display substrate, and manufacturing methods thereof, and a display device. The method for manufacturing the photodiode includes: forming a semiconductor material layer on a base substrate in a non-display region of a display substrate, the semiconductor material layer including a first contact area, a second contact area, and a semiconductor area sandwiched therebetween; processing the first contact area of the semiconductor material layer to form a first contact electrode; processing portions of the semiconductor material layer and the second contact area away from the base substrate in the semiconductor area, to form a first semiconductor layer and a second semiconductor layer stacked, the second semiconductor layer being located on a side of the first semiconductor layer away from the base substrate; and processing the second semiconductor layer in the second contact area to form a second contact electrode.

An imaging device of an embodiment comprises an aperture that transmits imaging light applied to a sample, a detector including a linear sensor comprising a linear light receiving surface extending in a first direction, a first image forming element that collects components of the imaging light in the first direction and forms an image on the light receiving surface with a first wave front aberration amount, and a second image forming element that collects components of the imaging light in a second direction orthogonal to the first direction and forms an image on the light receiving surface with a second wave front aberration amount smaller than the first wave front aberration amount.

An imaging device of an embodiment comprises an aperture that transmits imaging light applied to a sample, a detector including a linear sensor comprising a linear light receiving surface extending in a first direction, a first image forming element that collects components of the imaging light in the first direction and forms an image on the light receiving surface with a first wave front aberration amount, and a second image forming element that collects components of the imaging light in a second direction orthogonal to the first direction and forms an image on the light receiving surface with a second wave front aberration amount smaller than the first wave front aberration amount.

Aspects relate to a photonic processing system, an integrated circuit, and a method of operating an integrated circuit to control components to modulate optical signals. A photonic processing system, comprising: a photonic integrated circuit comprising: a first electrically-controllable photonic component electrically coupling an input pin to a first output pin; and a second electrically-controllable photonic component electrically coupling the input pin to a second output pin.

Aspects relate to a photonic processing system, an integrated circuit, and a method of operating an integrated circuit to control components to modulate optical signals. A photonic processing system, comprising: a photonic integrated circuit comprising: a first electrically-controllable photonic component electrically coupling an input pin to a first output pin; and a second electrically-controllable photonic component electrically coupling the input pin to a second output pin.

An optical sensor device, a method for fabricating the same, and a display device are disclosed. The optical sensor device includes a display region and a non-display region. In the display non-display region, the optical sensor device includes a thin film transistor, including an active layer, a gate insulating layer, a gate layer, a source and drain layer, and an interlayer dielectric layer. In the non-display display region, the optical sensor device includes a first insulating layer, a conductive layer and a second insulating layer which are stacked sequentially. The conductive layer is arranged in a same layer as the source and drain layer or the gate layer. In the non-display display region, the first insulating layer is provided with a first through-hole, and the optical sensor device further includes a photo-sensitive device in the first through-hole.

An optical sensor device, a method for fabricating the same, and a display device are disclosed. The optical sensor device includes a display region and a non-display region. In the display non-display region, the optical sensor device includes a thin film transistor, including an active layer, a gate insulating layer, a gate layer, a source and drain layer, and an interlayer dielectric layer. In the non-display display region, the optical sensor device includes a first insulating layer, a conductive layer and a second insulating layer which are stacked sequentially. The conductive layer is arranged in a same layer as the source and drain layer or the gate layer. In the non-display display region, the first insulating layer is provided with a first through-hole, and the optical sensor device further includes a photo-sensitive device in the first through-hole.