A parallel optical interconnect having an optoelectronic substrate connected to a transceiver electronics substrate is disclosed. The optoelectronic substrate may hold optical transmitters and receivers and be electrically connected to the transceiver electronics substrate that may hold transmitter and receiver circuitries. The two substrates may be electrically connected with each other by inter-substrate interconnects, and the optoelectronic substrate may have through-substrate vias connecting the transmitters and receivers to the inter-substrate interconnects.

A carrier substrate is configured to carry at least one electronic chip and includes a mounting front face. An encapsulating cover is mounted on the front face of the carrier substrate through a mounting. This mounting includes at least one seating surface through which the cover and the carrier substrate make contact. At least one adhesive bead is located elsewhere than the seating surface in order to securely fasten the encapsulation cover and the carrier substrate.

Aspects relate to a photonic processing system, an integrated circuit, and a method of operating an integrated circuit to control components to modulate optical signals. A photonic processing system, comprising: a photonic integrated circuit comprising: a first electrically-controllable photonic component electrically coupling an input pin to a first output pin; and a second electrically-controllable photonic component electrically coupling the input pin to a second output pin.

An optoelectronic component and an assembly with an optoectronic component are disclosed. In an embodiment an optoelectronic component includes an optical element with an outer surface and an inner surface that faces away from the outer surface, wherein the inner surface includes a first region of the optical element, in which the inner surface is flat, wherein the inner surface includes a second region of the optical element, wherein the second region adjoins the first region, and wherein the inner surface includes a third region of the optical element, in which the inner surface extends from the second region in the direction of a housing.

An optoelectronic component and an assembly with an optoectronic component are disclosed. In an embodiment an optoelectronic component includes an optical element with an outer surface and an inner surface that faces away from the outer surface, wherein the inner surface includes a first region of the optical element, in which the inner surface is flat, wherein the inner surface includes a second region of the optical element, wherein the second region adjoins the first region, and wherein the inner surface includes a third region of the optical element, in which the inner surface extends from the second region in the direction of a housing.

A display panel and a display device. The display panel includes a display area. The display area includes pixels in an array, pixels include at least three sub-pixels of different colors; display area includes a general display area, a transition display area, a photosensitive device setting area, general display area surrounds at least a part of transition display area, transition display area surrounds photosensitive device setting area; in transition display area, sub-pixels include display sub-pixels and virtual sub-pixels, sub-pixels include pixel circuits and light-emitting units, light-emitting units are electrically connected to pixel circuits in display sub-pixels, light-emitting units are insulated from pixel circuits in virtual sub-pixels; in photosensitive device setting area, sub-pixels include display sub-pixels; a setting density of display sub-pixels in transition display area is higher than that of the display sub-pixels in photosensitive device setting area, and lower than that of the display sub-pixels in general display area.

A display device includes a first region and a second region adjacent to the first region. A display element included in the first region has a function of reflecting visible light and a function of emitting visible light. A display element included in the second region has a function of emitting visible light. In an electronic device including the display device, the first region is located on a first surface (e.g., top surface) on which a main image is displayed, and the second region is located on a second surface (e.g., side surface) on which an auxiliary image is displayed.

A display device includes a first region and a second region adjacent to the first region. A display element included in the first region has a function of reflecting visible light and a function of emitting visible light. A display element included in the second region has a function of emitting visible light. In an electronic device including the display device, the first region is located on a first surface (e.g., top surface) on which a main image is displayed, and the second region is located on a second surface (e.g., side surface) on which an auxiliary image is displayed.

A display comprises a plurality of autonomous pixels on a stretchable substrate. Each autonomous pixel comprises a display element and a control element arranged to sense an external stimulus and to generate, entirely within the autonomous pixel, a control signal to drive the display element based, at least in part, on a magnitude of the sensed external stimulus. The stretchable substrate comprises a plurality of less elastic regions separated by stretchable areas, where the less elastic regions are less stretchable than the surrounding stretchable areas and each control element of an autonomous pixel is located in or on a less elastic region of the stretchable substrate.

Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.