An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

An optical device includes a substrate, a light receiving component, an encapsulant, a coupling layer and a light shielding layer. The light receiving component is disposed on the substrate. The encapsulant covers the light receiving component. The coupling layer is disposed on at least a portion of the encapsulant. The light shielding layer is disposed on the coupling layer.

A light-emitting device is provided. The light-emitting device includes a first substrate. The light-emitting device also includes a second substrate including a light-shielding structure. The light-emitting device further includes a first light-emitting module and a second light-emitting module being adjacent to each other. The first light-emitting module and the second light-emitting module are disposed between the first substrate and the second substrate. The first light-emitting module and the second light-emitting module are spaced apart by a gap, and the light-shielding structure at least partially covers the gap in a top view direction of the light-emitting device.

A light-emitting device is provided. The light-emitting device includes a first substrate. The light-emitting device also includes a second substrate including a light-shielding structure. The light-emitting device further includes a first light-emitting module and a second light-emitting module being adjacent to each other. The first light-emitting module and the second light-emitting module are disposed between the first substrate and the second substrate. The first light-emitting module and the second light-emitting module are spaced apart by a gap, and the light-shielding structure at least partially covers the gap in a top view direction of the light-emitting device.

There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.

A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

A carrier substrate is configured to carry at least one electronic chip and includes a mounting front face. An encapsulating cover is mounted on the front face of the carrier substrate through a mounting. This mounting includes at least one seating surface through which the cover and the carrier substrate make contact. At least one adhesive bead is located elsewhere than the seating surface in order to securely fasten the encapsulation cover and the carrier substrate.