A parallel optical interconnect having an optoelectronic substrate connected to a transceiver electronics substrate is disclosed. The optoelectronic substrate may hold optical transmitters and receivers and be electrically connected to the transceiver electronics substrate that may hold transmitter and receiver circuitries. The two substrates may be electrically connected with each other by inter-substrate interconnects, and the optoelectronic substrate may have through-substrate vias connecting the transmitters and receivers to the inter-substrate interconnects.

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

An electrical system includes a signal security detection system performing a method of determining a security of an interconnect. An interconnect extended between a first device and a second device. The interconnect has at least one conductive pathway aligned along a direction between the first device and the second device. A light source is configured to transmit a light through the interconnect and an optical detector is configured to receive the light passing through the interconnect. A processor records a first optical signature of the interconnect based on the light received at the optical detector at a first time, records a second optical signature of the interconnect based on the light received at the optical detector at a second time, and validates the second optical signature against the first optical signature to determine a security of the interconnect.

An electrical system includes a signal security detection system performing a method of determining a security of an interconnect. An interconnect extended between a first device and a second device. The interconnect has at least one conductive pathway aligned along a direction between the first device and the second device. A light source is configured to transmit a light through the interconnect and an optical detector is configured to receive the light passing through the interconnect. A processor records a first optical signature of the interconnect based on the light received at the optical detector at a first time, records a second optical signature of the interconnect based on the light received at the optical detector at a second time, and validates the second optical signature against the first optical signature to determine a security of the interconnect.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate having a first surface and a second surface opposite to the first surface, an optical device disposed on the first surface of the substrate, and an electronic device disposed on the second surface of the substrate. A power of the electronic device is greater than a power of the optical device. A vertical projection of the optical device on the first surface is spaced apart from a vertical projection of the electronic device on the second surface by a distance greater than zero.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate having a first surface and a second surface opposite to the first surface, an optical device disposed on the first surface of the substrate, and an electronic device disposed on the second surface of the substrate. A power of the electronic device is greater than a power of the optical device. A vertical projection of the optical device on the first surface is spaced apart from a vertical projection of the electronic device on the second surface by a distance greater than zero.

An optically controlled switch includes a substrate integrated waveguide (SIW) including: a first port and a second port, the first port and the second port being located at ends of the SIW to input and output an electromagnetic wave; and a shorting via electrically connected to a bottom layer of the SIW and separated from a top layer of the SIW by a dielectric gap. The optically controlled switch includes: a photoconductive element located on the top layer of the SIW and electrically connected to the shorting via and the top layer of the SIW, the photoconductive element being configured to have a dielectric state and a conductor state depending on a state of a controlling light flux; and a cutoff waveguide formed around the dielectric gap and the photoconductive element, and configured to provide control of the photoconductive element from a light source and block parasitic radiation.

An optically controlled switch includes a substrate integrated waveguide (SIW) including: a first port and a second port, the first port and the second port being located at ends of the SIW to input and output an electromagnetic wave; and a shorting via electrically connected to a bottom layer of the SIW and separated from a top layer of the SIW by a dielectric gap. The optically controlled switch includes: a photoconductive element located on the top layer of the SIW and electrically connected to the shorting via and the top layer of the SIW, the photoconductive element being configured to have a dielectric state and a conductor state depending on a state of a controlling light flux; and a cutoff waveguide formed around the dielectric gap and the photoconductive element, and configured to provide control of the photoconductive element from a light source and block parasitic radiation.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that holds the light diffusing member and is provided on a wire connected to the light source so as to be located in an uncoated region of the wire.