In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

The present disclosure relates to an optical detection panel. The optical detection panel may include a first substrate and a second substrate opposite the first substrate, a photosensitive component and a driving thin film transistor at a side of the second substrate facing the first substrate, a first electrode and a second electrode at a side of the second substrate facing the first substrate, and a plurality of microlenses at a side of the photosensitive component opposite from the second substrate. The second electrode may be connected to the driving thin film transistor.

Provided herein are improvements to dye-sensitized photovoltaic cells that enhance the ability of those cells to operate in normal room lighting conditions. These improvements include printable, non-corrosive, nonporous hole blocking layer formulations that improve the performance of dye-sensitized photovoltaic cells under 1 sun and indoor light irradiation conditions. Also provided herein are highly stable electrolyte formulations for use in dye-sensitized photovoltaic cells. These electrolytes use high boiling solvents, and provide unexpectedly superior results compared to prior art acetonitrile-based electrolytes. Also provided herein are chemically polymerizable formulations for depositing thin composite catalytic layers for redox electrolyte-based dye-sensitized photovoltaic cells. The formulations allow R2R printing (involves coating, fast chemical polymerization, rinsing of catalytic materials with methanol) composite catalyst layers on the cathode. In situ chemical polymerization process forms very uniform thin films, which is essential for achieving uniform performance from every cell in serially connected photovoltaic module.

A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 10.sup.17 cm.sup.−3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

The present invention concerns an electronic device, preferably a thin film electronic device, and a method for producing the device. The device comprises an intermediate structure (301, 401, 501) at the interface between neighboring unit devices connected in series. The intermediate structure is suitable to employ deposition techniques that make it possible to avoid steps of scribing or patterning insulating and/or separating lines between adjacent layers of the device.

A method for producing a textured structure of a crystalline silicon solar cell is provided, including the following steps: (1) forming a porous layer structure on a surface of a silicon wafer; (2) then cleaning with a first alkaline chemical solution; (3) removing residual metal particles with a cleaning solution; (4) and then etching the surface with a first chemical etching solution to obtain the textured structure of the crystalline silicon solar cell. The method greatly prolongs the lifetime of the mixed solution of hydrofluoric acid and nitric acid and ensures the stability and uniformity of the textured structure.

A solar cell module can include a printed circuit board (PCB) having an electrode connection part, at least one solar cell mounted on the PCB and electrically connected to the electrode connection part, and an encapsulant layer covering the solar cell and formed of a material including silicon.

A method for producing a surfaced passivated, encapsulated surface III-V type II superlattice (T2SL) photodetector, more specifically a p-type heterojunction device by cleaning, etching and exposing the surface of a III/V material to solution mixtures which simultaneously removes oxides from the surface and encapsulates the surfaces.

A method of manufacturing an optoelectronic integrated device can include: providing a semiconductor substrate including at least one optoelectronic device in the semiconductor substrate; forming a first dielectric layer on a first surface of the semiconductor substrate; forming a multilayer insulating layer on the first dielectric layer; forming a first opening in the multilayer insulating layer to expose the first dielectric layer above the optoelectronic device area; and forming a second dielectric layer on the dielectric layer, where the first dielectric layer and the second dielectric layer are anti-reflection layers.