Embodiments provide a transparent electrode having high stability, low sheet resistance, and high light transmissivity, a method for producing the transparent electrode, and an electronic device using the transparent electrode.

A transparent electrode including a structure including a transparent base material, a metal grid, metal nanowire, and a neutral polythiophene mixture. The metal grid has an embedded portion embedded in the transparent base material and a protrusion portion protruding from the transparent base material, and the metal nanowire and the neutral polythiophene mixture are arranged in contact with the transparent base material or the protrusion portion.

Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) and a grid electrode (31) provided in the photoelectric conversion cell (12) on a substrate. The photoelectric conversion cell (12) includes a first electrode layer (22), a second electrode layer (24), a photoelectric conversion layer (26) between the first electrode layer (22) and the second electrode layer (24). The second electrode layer (24) is formed of a transparent electrode layer located on opposite side of the photoelectric conversion layer (26) to the substrate (20). The grid electrode (31) is provided between the photoelectric conversion layer (26) and the transparent electrode layer.

A transparent electrode is provided having a graphene conducting layer disposed above a substrate, a field effect control layer formed by using a transparent material, and a dielectric layer disposed between the graphene conducting layer and the field effect control layer, wherein the field effect control layer has a polarity charge in a working state. A sheet resistance of the transparent electrode is reduced.

A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

Disclosed herein are laser scanning systems and methods of their use. In some embodiments, laser scanning systems can be used to ablatively or non-ablatively scan a surface of a material. Some embodiments include methods of scanning a multi-layer structure. Some embodiments include translating a focus-adjust optical system so as to vary laser beam diameter. Some embodiments make use of a 20-bit laser scanning system.

The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.

The present disclosure provides a photodiode, a manufacturing method thereof, and a display screen. The photodiode includes: a first electrode including a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part includes a first end and a second end; a connecting part disposed on the first sub-part, the first end, and a substrate corresponding to a gap between the first sub-part and the second sub-part; and a light converting part and a second electrode disposed on the second end in sequence.

Provided is a conductive material that is capable of achieving a high-electric conductivity, long-term stability under an atmospheric environment, heat and high humidity stabilities, as well as a conductive film and a solar cell using the same. The conductive material includes a mixture of carbon nanotubes (CNTs) and polystyrene sulfonic acid (PSS acid). The element ratio (S/C ratio) of sulfur (S) to carbon (C) in the mixture may be from 0.001 to 0.1 in terms of the number of atoms. CNTs and PSS acid may make up a content percentage of 10 wt % or more in the mixture. These conductive films comprised of the conductive material 6 may have a weight per unit area of the CNTs in the range from 1 mg/m.sup.2 to 10000 mg/m.sup.2. The solar cell may include the conductive film 7, wherein the film is on the surface of a semiconductor.