An inverted metamorphic multijunction solar cell including an upper first solar subcell, a second solar subcell and a third solar subcell. The upper first solar subcell has a first band gap and positioned for receiving an incoming light beam. The second solar subcell is disposed below and adjacent to, and is lattice matched with, the upper first solar subcell, and has a second band gap smaller than the first band gap. The third solar subcell is disposed below the second solar subcell, and is composed of a GaAs base and emitter layer so as to optimize the efficiency of the solar cell after exposure to radiation. In some implementations, at least one of the solar subcells has a graded band gap throughout its thickness.

A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

A multijunction solar cell in accordance with an example implementation includes a growth substrate; a first solar subcell disposed over or in the growth substrate; a tunnel diode disposed over the first solar subcell; and a grading interlayer directly disposed over the tunnel diode; a sequence of layers of semiconductor material forming a solar cell disposed over the grading interlayer comprising a plurality of solar subcells. The multijunction solar cell also includes a first wafer bowing inhibition layer disposed directly over an uppermost sublayer of the grading interlayer, such bowing inhibition layer having an in-plane lattice constant greater than the in-plane lattice constant of the uppermost sublayer of the grading interlayer. A second wafer bowing inhibition layer is disposed directly over the first wafer bowing inhibition layer.

A multijunction solar cell including an upper first solar subcell; a second solar subcell adjacent to the first solar subcell; a first graded interlayer adjacent to the second solar subcell; a third solar subcell adjacent to the first graded interlayer such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell, and a lower fourth solar subcell is provided adjacent to the second graded interlayer, such that the fourth subcell is lattice mismatched with respect to the third subcell. An encapsulating layer composed of silicon nitride or titanium oxide disposed on the top surface of the solar cell, and an antireflection coating layer disposed over the encapsulating layer.

An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.

A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

In general, this disclosure is directed to a flexible or stretchable sensor and a method of detecting a substance and/or electromagnetic radiation using said sensor. The sensor comprises a flexible or stretchable substrate, a pair of terminal electrodes disposed on the flexible or stretchable substrate in mutually spaced apart and opposing relation, and a sensing element applied to the flexible or stretchable substrate, between and in electrical contact with the pair of terminal electrodes, wherein the sensing element is responsive to a substance and/or electromagnetic radiation impinging thereon, and wherein when a voltage is applied across the sensor, an electrical signal is generated that is proportional to a resistance value corresponding to a sensing of the substance and/or electromagnetic radiation impinging on the sensing element.

A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate.

A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

An epitaxially grown III-V layer is separated from the growth substrate. The III-V layer can be an inverted lattice matched (ILM) or inverted metamorphic (IMM) solar cell, or a light emitting diode (LED). A sacrificial epitaxial layer is embedded between the GaAs wafer and the III-V layer. The sacrificial layer is damaged by absorbing IR laser radiation. A laser is chosen with the right wavelength, pulse width and power. The radiation is not absorbed by either the GaAs wafer or the III-V layer. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The III-V layer is detached from the growth wafer by propagating a crack through the damaged layer. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new III-V layers, resulting in savings in raw materials and grinding and etching costs.