The present invention is to grant a margin in the control of a depth of a groove when removing a transparent insulation layer after the transparent insulation layer is formed on the entire surface of the transparent conductive layer, thereby provide a solar cell which has superior productivity in mass manufacturing. A solar cell includes an n-type amorphous silicon layer formed on a front-surface side of an n-type monocrystalline silicon the substrate; a front-surface side transparent conductive layer formed on the n-type amorphous silicon layer; a p-type amorphous silicon layer formed on a rear-surface-side of the substrate; and a rear-surface-side transparent conductive layer formed on the p-type amorphous silicon layer. A front-surface side collector electrode is formed by plating on the front-surface side transparent conductive layer whereas a rear-surface-side collector electrode is formed on the rear-surface-side transparent conductive layer by printing.

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.

A method of fabricating an active matrix display is disclosed in which one or more oxide thin film transistors is monolithically integrated with an inorganic light emitting diode structure. The method comprises forming an array of inorganic light emitting diodes over a substrate defining a plurality of sub-pixels, depositing an insulating layer over the inorganic LED array, forming conductive vias through the insulating layer, one via for each LED in the LED array, and forming a metal oxide thin film transistor backplane, including an array of pixel driver circuits, over the dielectric layer and conductive vias, wherein one driver circuit electrically controls each sub-pixel through the dielectric layer.

A photovoltaic device and a method of forming a contact stack of the photovoltaic device are disclosed. The photovoltaic device may include a first layer deposited on a semiconductor layer including a compound semiconductor material. The photovoltaic device may also include a dopant layer comprising tin (Sn) deposited on the first layer. The photovoltaic device may further include a conductive layer deposited or provided over the dopant layer to form a contact stack with the first layer and the dopant layer.

In a method of manufacturing a solar cell, a groove is formed on a first surface of an n-type semiconductor substrate. A p-side transparent conductive film layer is formed on the first surface of the n-type semiconductor substrate formed with the groove. A non-deposition area, where the p-side transparent conductive film layer is not formed, is formed in at least a part of a side surface of the groove formed on the first surface of the n-type semiconductor substrate.

An array substrate of an X-ray sensor and a method for manufacturing the same are provided, the method comprising a step of forming a thin-film transistor element and a photodiode sensor element, wherein the step of forming the thin-film transistor element comprises: forming a gate electrode on an base substrate by a mask process; depositing a gate insulating layer on the base substrate on which the gate electrode is formed; the step of forming the photodiode sensor element comprises: forming an ohmic contact layer on the base substrate through the same mask process while forming the gate electrode; forming a semiconductor layer and a transparent electrode through a mask process on the substrate on which the ohmic contact layer is formed; depositing the gate insulating layer on the base substrate on which the semiconductor layer and the transparent electrode are formed while depositing the gate insulating layer on the base substrate on which the gate electrode is formed. A gate pattern and an ohmic contact layer are formed through the same mask process, and a passivation layer substitutes a channel blocking layer to reduce the number of the mask processes and simplify the manufacturing process and improve throughput and yield of the product.

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.

A solar cell of the present invention includes a collecting electrode extending in one direction on a first principal surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and further includes an insulating layer provided with openings between the electroconductive layers. The first electroconductive layer is covered with the insulating layer, and the second electroconductive layer is partially in conduction with the first electroconductive layer through the openings of the insulating layer. The first electroconductive layer has non-central portions within a range from both ends of the first electroconductive layer, and a central portion between the two non-central portions, in a direction orthogonal to an extending direction of the first electroconductive layer. A density of openings at the central portion is higher than a density of openings at the non-central portion.

The present application discloses systems and methods for manufacturing large PV sheets and conveying large PV sheets away from the PV manufacturing site while using power from the PV sheet to power the PV manufacturing site.