Described herein are systems incorporating a Casimir cavity, such as an optical Casimir cavity or a plasmon Casimir cavity. The Casimir cavity modifies the zero-point energy density therein as compared to outside of the Casimir cavity. The Casimir cavities are paired in the disclosed systems with product generating devices and the difference in zero-point energy densities is used to directly drive the generation of products, such as chemical reaction products or emitted light.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips with interconnect structures are disclosed. LED chips are provided that include first interconnects electrically coupled to an n-type layer and second interconnects electrically connected to a p-type layer. Configurations of the first and second interconnects are provided that may improve current spreading by reducing localized areas of current crowding within LED chips. Various configurations are disclosed that include collectively formed symmetric patterns of the first and second interconnects, diameters of certain ones of either the first or second interconnects that vary based on their relative positions in LED chips, and spacings of the second interconnects that vary based on their distances from the first interconnects. In this regard, LED chips are disclosed with improved current spreading as well as higher lumen outputs and efficiencies.

The present invention discloses a micro LED structure including a first semiconductor layer, a first electrode, a second electrode, and an active layer. The first semiconductor layer has two opposite sides defined as a first surface and a second surface. The first semiconductor layer has a doped region located therein and exposed on the first surface. A pn junction is formed between the doped region and the first semiconductor layer. The first electrode and the second electrode, located on the first surface, are capable of electrically connecting to the first semiconductor layer and the doped region respectively. The active layer is adjacent to the second surface. Wherein the first semiconductor layer is a first doping type, and the doped region is a second doping type different from the first doping type, and the first semiconductor layer and the pn junction are located at identical side of the active layer.

Disclosed is a small-size vertical-type light emitting diode chip with high luminous in a central region. A PN junction structure is arranged on a light emitting region base of an interface structure, the interface structure is provided with a P-type Ohmic contact area at the light emitting region base, a central area of the PN junction structure is above the P-type Ohmic contact area, an insulating layer is formed on an extending platform adjacent to the light emitting region base and extends to cover an N-type semiconductor of the PN junction structure to form a border covering region surrounding the N-type semiconductor, an N-type Ohmic contact electrode covers the border covering region, and an N-type electrode pad is arranged on the insulating layer and electrically connected with the N-type Ohmic contact electrode via a bridging connected metal layer.

A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

A light-emitting diode chip structure comprising a substrate; a metal contact layer disposed on the substrate; a light-emitting semiconductor layer disposed on the metal contact layer; an insulating protective layer covering the metal contact layer and the light-emitting diode semiconductor layer. The insulating protective layer includes a first opening that exposes the light-emitting semiconductor layer and a second opening that exposes the metal contact layer. The metal conductive layer with one end passing through the first opening to be electrically connected to the light-emitting semiconductor layer, and the other end of the metal conductive layer extended on the insulating protective layer. A first electrode pad and a second electrode pad are respectively located on lateral sides of the light-emitting semiconductor layer and respectively disposed on the metal conductive layer and passing through the second opening to be disposed on the metal contact layer.

A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

A light-emitting element includes: an anode; a hole transport layer of a p-type semiconductor; a n-type semiconductor layer containing a Group 13 element; a light-emitting layer containing quantum dots; an electron transport layer; and a cathode, arranged in this order.

An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

A light emitting diode (LED) stack for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, a first color filter interposed between the first LED stack and the second LED stack, and a second color filter interposed between the second LED stack and the third LED stack, in which the second LED stack and the third LED stack are configured to transmit light generated from the first LED stack to the outside, and the third LED stack is configured to transmit light generated from the second LED stack to the outside.