A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.

A light emitting device including a first light emitter, a second light emitter, and a third light emitter, each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. An adhesive layer includes a first adhesive portion disposed between the first light emitter, and the second light emitter, and a second adhesive portion disposed between the second light emitter and the third light emitter, in which the second light emitter is disposed between the first light emitter and the third light emitter, and the first adhesive portion and the second adhesive portion are optically transmitting and connect adjacent light emitters.

The invention relates to an LED package for UV light comprising an optoelectronic device which, in particular as a volume emitter, is designed to emit light in the ultraviolet spectrum during operation. The component is arranged on a carrier with two contact pads for electrical contacting. Furthermore, a frame surrounding the component and arranged on the carrier is provided with a gas-impermeable outlet region lying in a main radiation direction, so that a hermetically sealed cavity comprising an inner region of the carrier is formed, the side walls of the frame facing the optoelectronic device being bevelled and opening towards the main radiation direction. An ESD protection element arranged outside the inner area on the carrier is electrically connected to at least one of the two contact pads.

An optoelectronic component includes a first semiconductor emitter and a second semiconductor emitter, each with an active region configured to generate electromagnetic radiation, and each with a front side coupling out area. The optoelectronic component also includes a radiation-impermeable cover layer and a carrier. The semiconductor emitters are on a first side of the carrier. The first semiconductor emitter is configured to emit electromagnetic radiation in a first wavelength range through its coupling out area. The second semiconductor emitter is configured to emit electromagnetic radiation in a second wavelength range through its coupling out area. The first and second wavelength ranges are different from each other. The cover layer is formed with a photopolymer, is arranged on the first side of the carrier, includes a coupling out window which completely penetrates the cover layer, and in which the coupling out areas are at least partially free of the cover layer.

In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips with interconnect structures are disclosed. LED chips are provided that include first interconnects electrically coupled to an n-type layer and second interconnects electrically connected to a p-type layer. Configurations of the first and second interconnects are provided that may improve current spreading by reducing localized areas of current crowding within LED chips. Various configurations are disclosed that include collectively formed symmetric patterns of the first and second interconnects, diameters of certain ones of either the first or second interconnects that vary based on their relative positions in LED chips, and spacings of the second interconnects that vary based on their distances from the first interconnects. In this regard, LED chips are disclosed with improved current spreading as well as higher lumen outputs and efficiencies.

Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Provided is a micro-LED device, comprising: a light emitting unit comprising a light emitting layer having a first end surface, a second end surface opposite to the first end surface, and a lateral surface between the first end surface and the second end surface; a P-type semiconductor layer on the first end surface; and an N-type semiconductor layer on the second end surface; a transparent insulating layer covering at least the lateral surface of the light emitting layer; and a reflecting layer on a side of the transparent insulating layer away from the light emitting unit, wherein the transparent insulating layer insulates the light emitting unit from the reflecting layer, and the reflecting layer covers at least the lateral surface of the light emitting layer.

An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.

A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.