An SiC substrate processing method for producing an SiC substrate from an SiC ingot. The SiC substrate processing method includes a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot and next applying the laser beam LB to the SiC ingot to thereby form a separation layer for separating the SiC substrate from the SiC ingot, a substrate attaching step of attaching a substrate to the upper surface of the SiC ingot, and a separating step of applying an external force to the separation layer to thereby separate the SiC substrate with the substrate from the SiC ingot along the separation layer.

The present disclosure provides a silicon-based direct band gap light-emitting material compatible with the CMOS fabrication process, and a preparation method thereof. The method comprises steps of: preparing a silicon-based material, wherein the silicon-based material is a germanium material or a silicon-germanium alloy; filling some of lattice interstitial sites of the silicon-based material with noble gas atoms and/or other atoms with a low atomic number, so as to expand the lattice volume in order to transform the band structure from indirect band gap to direct band gap, thereby obtaining a silicon-based direct band gap light-emitting material. The present disclosure also provides a silicon-based light-emitting device. The preparation method of the present disclosure is compatible with CMOS integrated circuit processes, and realizes direct band gap light-emission from germanium and silicon germanium alloy materials with a light-emitting efficiency comparable to that of direct band gap Group III-V materials such as InP and GaAs, thus offering a completely new solution for on-chip light sources required for silicon- or germanium-based optoelectronic integration technologies.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

The present application relates to the field of semiconductor, especially the Light-Emitting Diode (LED) and a manufacturing method thereof. In some examples, by etching the channel between adjacent light-emitting units, making the high reflection layer at the bottom of the channel, and producing interference fringes through the high reflection layer, and the side of the LED is exposed by using the interference fringes, thereby forming the structure of the groove and the protrusion on the side of the LED. Further, the width of the bottom of the groove can be larger than the width of the opening, and a silicon dioxide layer can be provided on the surfaces of the protrusion structures, which can further improve the luminous efficiency of the LED.

A semiconductor device may include a substrate having waveguides thereon, and a superlattice overlying the substrate and waveguides. The superlattice may include stacked groups of layers, with each group of layers comprising a stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include an active device layer on the superlattice including at least one active semiconductor device.

Diamond Seed Technology is a material comprising man-made diamond to pure diamond used as semiconductors or conductors to solve the problem of design life expectancy and durability, power generation and output, heat resistance, propulsion, emissions reduction and its flexibility for existing and future designs. This material can be used for various materials, to produce or modify apparatus' and devices such as semiconductors, conductors, fuel cells, light bulb filament illumination, GUI [Graphical User Interfaces; monitor, television, smart screens, portable devices and etc.], LED's, solar cells/panels/bulbs and wherever semiconductors are used in various industries, land, sea and aerospace transportation, portable uses, stationary installations such residential/commercial properties, technological fields and industries and that utilize GUI [Graphic User Interface].

A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.

A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.