The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

The invention relates to a process for fabricating an optoelectronic device (1) for emitting infrared radiation, comprising the following steps: i) producing a first stack (10) comprising: alight source (11), a first bonding sublayer (17) made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack (20) comprising: a GeSn-based active layer (23) obtained by epitaxy at an epitaxy temperature (T.sub.epi), a second bonding sublayer (25) made from said metal of interest, iii) determining an assembly temperature (Tc) substantially comprised between an ambient temperature (T.sub.amb) and said epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of said metal of interest is higher than or equal to 0.5 J/m.sup.2; iv) joining, by direct bonding, at said assembly temperature (Tc), said stacks (10, 20).

A method is provided for fabricating a graphene light emitting transistor. The method includes: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate and the gate electrode; forming a graphene oxide layer on the gate insulating layer; reducing two ends of the graphene oxide layer to respectively form a source electrode and a drain electrode made of graphene; forming a graphene quantum dot layer on an unreduced part of the graphene oxide layer, the source electrode, and the drain electrode; and forming a water and oxygen resistant layer on the graphene quantum dot layer.

A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.

A display substrate, a display apparatus, and a manufacturing method for the display substrate are provided. The display substrate includes: a substrate and a plurality of pixel units arranged in an array on the substrate; the pixel unit includes a light emitting diode, a connecting metal pattern, and a thin film transistor arranged in sequence along a direction away from the substrate; the connecting metal pattern is conductively connected to a top electrode of the light emitting diode; an active layer of the thin film transistor is insulated and spaced from the connecting metal pattern, and the drain of the thin film transistor is conductively connected to the connecting metal pattern.

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

A method is provided for fabricating a graphene light emitting transistor. The method includes: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate and the gate electrode; forming a graphene oxide layer on the gate insulating layer; reducing two ends of the graphene oxide layer to respectively form a source electrode and a drain electrode made of graphene; forming a graphene quantum dot layer on an unreduced part of the graphene oxide layer, the source electrode, and the drain electrode; and forming a water and oxygen resistant layer on the graphene quantum dot layer.