A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

A Gunn diode is disclosed which comprises a first contact layer (110), a second contact layer (120), and an active layer (130) based on a gallium nitride (GaN) semiconductor material having a base surface (132) and a side surface (135) non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer (110) electrically contacts the side surface (135) to form a side contact (115). The second contact layer (120) forms an electrical contact for the base surface (132), so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer (110) and the second contact layer (120) at the side contact (115).

A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.

A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type Al.sub.xGa.sub.(1-x)InP transition unit and a p-type GaP ohmic contact layer that are sequentially disposed in such order, wherein in the p-type Al.sub.xGa.sub.(1-x)InP transition unit, 0<x≤0.7. An infrared light-emitting diode including the aforementioned light-emitting epitaxial structure and a method for manufacturing the light-emitting epitaxial structure are also disclosed.

A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.

A micro-light emitting diode (micro-LED) wafer includes a substrate, an n-type semiconductor layer grown on the substrate, an active region grown on the n-type semiconductor layer and configured to emit visible light, and a p-type semiconductor layer grown on the active region. The active region includes a compressive-strained quantum well layer and compressive-strained quantum barrier layers. At least one of the p-type semiconductor layer or the n-type semiconductor layer includes a tensile-strained layer having a thickness greater than about 50 nm, such that the tensile-strained layers can counter the compressive strain of the active region, thereby reducing the overall strain and bow of the micro-LED wafer.

In an embodiment a radiation emitting semiconductor body includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active region located between the first semiconductor region and the second semiconductor region, wherein the active region comprises InGaAlP, wherein the first conductivity type is n-conductive and the second conductivity type is p-conductive, wherein the active region has a larger band gap in an edge region of the semiconductor body than in a central region of the semiconductor body, and wherein a band gap of the second semiconductor region in the edge region and in the central region is the same.

Discussed is a display device and a method for manufacturing the display device, and more particularly, to a display device using a semiconductor light emitting element having a size of several μm to several tens of μm, and a method for manufacturing the display device. The display device can include a board including a wiring electrode; and a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode. Each of the plurality of semiconductor light emitting diodes an include a first conductivity type semiconductor layer, an active layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the active layer. The first conductivity type semiconductor layer can include a plurality of recessed portions.