A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

A method for fabricating quantum rods includes: preparing a Cd-precursor; preparing a S-precursor and CdSe seeds; preparing a Zn-precursor; mixing the S-precursor and the CdSe seeds with the Cd-precursor in a reaction mixture; adding the Zn-precursor to the reaction mixture; stopping the reaction; and performing a purification process to obtain the quantum rods.

Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

An epitaxial wavelength conversion element (100) is specified which comprises a semiconductor layer sequence (1) with an active layer (10) arranged between a first cladding layer (11) and a second cladding layer (12), the active layer being embodied to absorb light in a first wavelength range and to re-emit light in a second wavelength range, which is different from the first wavelength range, wherein the first cladding layer and the active layer are based on a III-V compound semiconductor material system and wherein the second cladding layer is based on a II-VI compound semiconductor material system.

Furthermore, a light-emitting semiconductor device comprising a light-emitting semiconductor chip and an epitaxial wavelength conversion element and methods for manufacturing the epitaxial wavelength conversion element and the light-emitting semiconductor device are specified.

A method for selective metallization includes: selectively adsorbing catalytic nanoparticles onto an imprint mold to form a selectively adsorbed catalytic nanoparticle (SACN) mold; using the SACN mold in an imprinting process to synchronously transfer a pattern and the catalytic nanoparticles onto a film; separating the film from the SACN mold; and selectively depositing metal onto the film based on the pattern transferred to the film.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

Provided is a core-shell type light-emitting quantum dot, including an alloy type core consisting of Cd, Se, Zn, and S, and a shell layer having a sphalerite structure and being coated on the surface of the alloy core, wherein the element ratio of each of Zn and S accounts for 30 to 50% of the overall core, and the content of Cd and Se gradually decreases outward from the core center. Also provided is a method for preparing the core-shell type light-emitting quantum dot. By having the alloy core and the shell layer with a sphalerite structure, the core-shell type quantum dot can achieve quantum efficiency of 95%, and have high temperature resistance and excellent water- and oxygen-barrier performance

A method for selective metallization includes: selectively adsorbing catalytic nanoparticles onto an imprint mold to form a selectively adsorbed catalytic nanoparticle (SACN) mold; using the SACN mold in an imprinting process to synchronously transfer a pattern and the catalytic nanoparticles onto a film; separating the film from the SACN mold; and selectively depositing metal onto the film based on the pattern transferred to the film.