The present invention provides a display device including a substrate, a wiring electrode disposed on the substrate, and a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and made of a mixture of conductive particles and an insulating material, and a light transmitting layer formed between the semiconductor light emitting devices. And the anisotropic conductive layer is formed in plurality, and any one of the plurality of anisotropic conductive layers is formed to surround one semiconductor light emitting device or to surround a plurality of semiconductor light emitting devices adjacent to each other.

A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

A method for forming a common electrode is provided, including: a) providing a support substrate on which rest optoelectronic devices separated by trenches; b) forming a dielectric layer on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer, so as to uncover the flanks at a first section of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer, the metal layer remaining in the trenches forming the common electrode.

A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure; a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.

A method of making a surface-mountable pixel engine package comprises providing an array of spaced-apart conductive pillars and an insulating mold compound laterally disposed between the conductive pillars on a substrate together defining a planarized surface. Pixel engines comprising connection posts are printed to the conductive pillars so that each of the connection posts is in electrical contact with one of the conductive pillars. The pixel engines are tested to determine known-good pixel engines. An optically clear mold compound is provided over the planarized surface and tested pixel engines. Optically clear mold compound is adhered to a tape and the substrate is removed. The optically clear mold compound, the insulating mold compound, the conductive pillars, the optically clear mold compound, and the tested pixel engines are singulated to provide pixel packages that comprise the pixel engines and the known-good pixel engines are transferred to a reel or tray.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.

A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm.sup.2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

A display device can include a base part, a semiconductor light emitting device disposed on a first region of the base part, and a plurality of assembly electrodes extending along one direction on the base part and to which a voltage is applied to dispose the semiconductor light emitting device at a pre-set position on the first region. The plurality of assembly electrodes are disposed not to overlap a thin film transistor.