A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor layer, a second semiconductor layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a via having a plurality of recesses and a contact layer, wherein the first semiconductor layer has a first electrical contact region, wherein the second semiconductor layer has a second electrical contact region, wherein the via completely penetrates the first semiconductor layer and the active layer and is electrically connected to the second contact region, wherein the first contact region is arranged within the recesses of the via, and wherein the first contact region is divided into a plurality of partial regions, each partial region being arranged in one of the recesses and the partial regions being separated from each other.

A method includes mounting a ceramic phosphor on an acrylic-free and metal-containing catalyst-free tacky layer of a dicing tape, dicing the ceramic phosphor from the dicing tape into ceramic phosphor plates, removing the ceramic phosphor plates from the dicing tape, and attaching the ceramic phosphor plates on light-emitting device (LED) dies.

A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 μm, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

The present specification provides a micro LED display device which minimizes a short-circuit fault by using a semiconductor light emitting element including multiple passivation layers formed therein, and a manufacturing method thereof. In a display device using a plurality of semiconductor light emitting elements according to one embodiment of the present invention, at least one of the semiconductor light emitting elements comprises: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer; a first conductive electrode; a second conductive electrode; and a first passivation layer and a second passivation layer successively disposed to surround the lateral surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the second passivation layer is positioned in a region excluding parts in contact with a first electrode and a second electrode, on the first conductive electrode and the second conductive electrode.

A method of forming a monolithic LED precursor is provided. The method comprises: providing a substrate having a top surface; forming a first semiconductor layer comprising a Group III-nitride on the top surface of the substrate; selectively masking the first semiconductor layer with a LED mask layer, the LED mask layer comprising an aperture defining a LED well through a thickness of the LED mask layer to an unmasked portion of the first semiconductor layer, the LED well comprising LED well sidewalls extending from a top surface of the first semiconductor layer to a top surface of the LED mask layer; and selectively forming a monolithic LED stack within the LED well on the unmasked portion of the first semiconductor layer. The monolithic LED stack comprises a n-type semiconductor layer comprising a Group III-nitride formed on the first semiconductor layer, an active layer formed on the first semiconductor layer comprising one or more quantum well sub-layers, the active layer comprising a Group III-nitride, and a p-type semiconductor layer comprising a Group III-nitride formed on the second semiconductor layer. The LED stack sidewalls of the monolithic LED stack extend from the top surface of the first semiconductor layer conform to the LED well sidewalls of the LED mask layer.

Discussed is a display device and a method for manufacturing the display device, where the display device includes a substrate, a wiring electrode disposed on the substrate, semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and includes conductive particles and an insulating material, and a light-transmitting layer formed between the semiconductor light emitting devices, where the semiconductor light emitting devices includes first semiconductor light emitting devices emitting a first color and second semiconductor light emitting devices emitting a second color different from the first color, and where the first and second semiconductor light emitting devices are alternately disposed with each other.

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.