According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.

A method of manufacturing a display apparatus includes performing a first repair process of detecting a first defective light emitting diode (LED) from among a plurality of LEDs provided on a sapphire substrate and removing the first defective LED; attaching the plurality of LEDs to electrode patterns of an interposer substrate and separating the sapphire substrate from the plurality of LEDs; and performing a second repair process of detecting a second defective LED among the plurality of LEDs attached to the electrode patterns and replacing the second defective LED.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

A method of manufacturing a LED precursor and a LED precursor is provided. The LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack comprises a first semiconducting layer comprising a Group III-nitride, a second semiconducting layer, and third semi-conducting layer. The second semiconducting layer comprises a first Group III-nitride including a donor dopant such that the second semiconducting layer has a donor density of at least 5×1018 cm-3. The second semiconducting layer has an areal porosity of at least 15% and a first in-plane lattice constant. The third semiconducting layer comprises a second Group III-nitride different to the first Group-III-nitride. The monolithic growth stack comprises a mesa structure comprising the third semiconducting layer such that the growth surface comprises a mesa surface of third semiconducting layer and a sidewall surface of the third semiconducting layer encircling the mesa surface. The sidewall surface of the third semiconducting layer is inclined relative to the mesa surface. The mesa surface of the third semiconducting layer has a second in-plane lattice constant which is greater than the first in-plane lattice constant.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

Discussed is a display device including a base portion; assembly electrodes that extend in one direction and are disposed on the base portion at predetermined intervals; a dielectric layer deposited on the base portion to cover the assembly electrodes; a first wiring electrode that extends in the same direction as the assembly electrodes and is disposed on the dielectric layer so as not to overlap the assembly electrodes; a partition wall portion deposited on the dielectric layer while arranging cells at predetermined intervals to overlap the assembly electrodes and the first wiring electrode along an extension direction of the assembly electrodes; and semiconductor light-emitting elements seated in the cells, respectively, wherein a solder layer electrically connecting a semiconductor light-emitting element seated in a cell and the first wiring electrode overlapping the cell is filled in the cell from among the plurality semiconductor light emitting elements and the cells.

A semiconductor light-emitting element supply device according to an embodiment of the present invention supplies semiconductor light-emitting elements in a fluid chamber in which self-assembly occurs, the semdconductor light-emitting element supply device comprising: a tray disposed in the fluid chamber; a transfer unit which includes a magnet and a magnet accommodating part for accommodating the magnet and which transfers the semiconductor light-emitting elements by using magnetic force; a supply unit disposed above the tray to supply the transferred semiconductor light-emitting elements to the tray; and a control unit for controlling operations of the tray, the transfer unit and the supply unit, wherein the control unit controls the position of the magnet accommodated in the magnet accommodating part so that the semiconductor light-emitting elements are adhered on one surface of the magnet accommodating part or the adhered semiconductor light-emittng elements are separated from the one surface of the magnet accommodating part.

A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.