Embodiments relate to a light emitting device, a light emitting device package, and a lighting system comprising the same. The light emitting device according to embodiments may comprise: a first conductivity-type semiconductor layer; an active layer on the first conductivity-type semiconductor layer; an electron blocking layer on the active layer; and a second conductivity-type semiconductor layer on the electron blocking layer. The electron blocking layer may comprise an In.sub.xAl.sub.yGa.sub.1-x-yN based superlattice layer (wherein 0≦x≦1, 0≦y≦1).

Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

A unit pixel of a microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, and red light are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.

A unit pixel of a microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, and red light are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.

An epitaxial structure includes an n-type layer, a p-type layer, an active layer, and a current spreading layer. The active and current spreading layers respectively have first and third concentration profiles of indium which respectively include first and third characteristic peaks. A heavily doped layer formed between the active and current spreading layers has a second concentration profile of silicon with a second characteristic peak. A ratio of a first minimum horizontal distance between peak tops of first and third characteristic peaks, to a second minimum horizontal distance between peak tops of second and third characteristic peaks, is less than one seventh.

A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 10.sup.17 at/cm.sup.3. The electrically conductive layer may include doped diamond.

A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes Al.sub.xGa.sub.1-xN, the second layer includes Al.sub.yGa.sub.1-yN, wherein 0≤x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.