A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

A quantum dot film includes: one surface grafted with a first ammonium halide ligand; and another surface opposite to the one surface and grafted with a second ammonium halide ligand. The first ammonium halide ligand has a general structural formula:

##STR00001##

and the second ammonium halide ligand has a general structural formula:

##STR00002##

n.sub.1≤12, n.sub.2≤12, 12≤n.sub.3≤17, 12≤n.sub.4≤17, n.sub.1, n.sub.2, n.sub.3 and n.sub.4 are natural numbers, Y.sub.1 and Y.sub.2 are independently selected from phenyl or hydrogen, and X is halogen.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Disclosed is a unit pixel of a micro-display capable of minimizing light emitted through a side surface. A side surface of the unit pixel having a vertically stacked pixel structure is etched and has inclination angle. Light directed toward the side surface is reflected by the side surface inclined at an angle, and the light is emitted in a direction perpendicular to the growth surface or the surface of the growth substrate.

Disclosed is a unit pixel of a micro-display capable of minimizing light emitted through a side surface. A side surface of the unit pixel having a vertically stacked pixel structure is etched and has inclination angle. Light directed toward the side surface is reflected by the side surface inclined at an angle, and the light is emitted in a direction perpendicular to the growth surface or the surface of the growth substrate.

Nanowire light emitting diodes (LEDs) are operable for spontaneous emission of light at significantly reduced current densities and with very narrow linewidths relative to conventional LEDs.

An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.