The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by introducing a second raw material gas into a furnace at a second temperature, the second raw material gas including a second gas having a second flow rate, the second temperature being less than the first temperature. A first flow rate ratio of the first gas in the first raw material gas is greater than a second flow rate ratio of the second gas in the second raw material gas.

A semiconductor optical device (40, 50, 60) comprises a first region 42 comprising an active region configured such that electrons and holes recombine in the active region to produce photons when a voltage is applied to the device. The device comprises at least one second region (43, 44, 53, 54, 62, 63) comprising a quantum well structure which is configured to trap electrons only, to trap holes only, or to trap different amounts of electrons and holes. The second region is arranged at a distance from the first region which is sufficiently close to the first region such that a charge imbalance develops in the first region when a voltage is applied to the device, thereby to reduce Auger recombination in the first region.

A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Eg.sub.n, a bandgap of Eg.sub.1, a bandgap of Eg.sub.2, a bandgap of Eg.sub.3 and a bandgap of Eg.sub.a which satisfy a relationship of Eg.sub.n≥Eg.sub.1>Eg.sub.2>Eg.sub.3>Eg.sub.a.

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

A method for manufacturing a light-emitting element includes: forming a first light-emitting part comprising a first n-type semiconductor layer, a first active layer on the first n-type semiconductor layer, and a first p-type semiconductor layer on the first active layer; forming an intermediate layer on the first light-emitting part; and forming a second light-emitting part on the intermediate layer, the second light-emitting part comprising a second n-type semiconductor layer, a second active layer on the second n-type semiconductor layer, and a second p-type semiconductor layer on the second active layer.

Provided is a display substrate including: a base substrate, a plurality of micro light-emitting diodes and a plurality of touch electrodes; wherein the micro light-emitting diode comprises: a first electrode, a light-emitting layer, and a second electrode that are sequentially arranged in a direction distal from the base substrate; and the touch electrode is disposed on a side of the micro LED distal from the base substrate. A manufacturing method of manufacturing a display substrate, a display panel, and a display device are also provided.

Provided is a display substrate including: a base substrate, a plurality of micro light-emitting diodes and a plurality of touch electrodes; wherein the micro light-emitting diode comprises: a first electrode, a light-emitting layer, and a second electrode that are sequentially arranged in a direction distal from the base substrate; and the touch electrode is disposed on a side of the micro LED distal from the base substrate. A manufacturing method of manufacturing a display substrate, a display panel, and a display device are also provided.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.