A light emitting element includes: a Si substrate including: a first semiconductor layer, a plurality of light emitting layers arranged in a matrix on part of an upper surface of the first semiconductor layer, and a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers; a first external connection part disposed on the Si substrate at a first end of the Si substrate in a longitudinal direction; a second external connection part disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection part, and a second wiring electrode electrically connected to the second external connection part.

A light emitting element includes: a Si substrate including: a first semiconductor layer, a plurality of light emitting layers arranged in a matrix on part of an upper surface of the first semiconductor layer, and a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers; a first external connection part disposed on the Si substrate at a first end of the Si substrate in a longitudinal direction; a second external connection part disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection part, and a second wiring electrode electrically connected to the second external connection part.

A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.

A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.

A light emitting drive substrate, a manufacturing method of the light emitting drive substrate, a light emitting substrate and a display device. The light emitting drive substrate includes a first light-emitting subregion, a second light-emitting subregion, a periphery area, a first power supply wire and a second power supply wire. A resistance between the first end and the second end of the first power supply wire is equal to a resistance between the first end and the second end of the second power supply wire, and a wire length between the first end and the second end of the first power supply wire is not equal to a wire length between the first end and the second end of the second power supply wire.

A light emitting drive substrate, a manufacturing method of the light emitting drive substrate, a light emitting substrate and a display device. The light emitting drive substrate includes a first light-emitting subregion, a second light-emitting subregion, a periphery area, a first power supply wire and a second power supply wire. A resistance between the first end and the second end of the first power supply wire is equal to a resistance between the first end and the second end of the second power supply wire, and a wire length between the first end and the second end of the first power supply wire is not equal to a wire length between the first end and the second end of the second power supply wire.

A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.

A light emitting diode includes a first conductivity type nitride semiconductor layer, a V-pit generation layer disposed on the first conductivity type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer, a stress relief layer disposed between the V-pit generation layer and the active layer, and a second conductivity type nitride semiconductor layer disposed on the active layer. The stress relief layer and the active layer may be formed in the V-pits, as well as on a flat surface of the V-pit generation layer, and the active layer may emit light of a multi-band spectrum.

A display device according to an embodiment of the present disclosure includes a see-through area for camera in which a camera module is disposed, a routing area disposed around the see-through area for camera and overlapped by at least one data line and scan line, and a pixel area which includes the see-through area for camera and the routing area and includes a plurality of sub-pixels including an organic light emitting element and a cathode is disposed therein.

A display device according to an embodiment of the present disclosure includes a see-through area for camera in which a camera module is disposed, a routing area disposed around the see-through area for camera and overlapped by at least one data line and scan line, and a pixel area which includes the see-through area for camera and the routing area and includes a plurality of sub-pixels including an organic light emitting element and a cathode is disposed therein.