A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

A semiconductor structure can include a substrate comprising a first in-plane lattice constant, a graded layer on the substrate, and a first region of the graded layer comprising a first epitaxial oxide material comprising a second in-plane lattice constant. The graded layer on the substrate can include (Al.sub.x1Ga.sub.1−x1).sub.y1O.sub.z1, wherein x1 is from 0 to 1, wherein y1 is from 1 to 3, wherein z1 is from 2 to 4, and wherein x1 varies in a growth direction such that the graded layer has the first in-plane lattice constant adjacent to the substrate and a second in-plane lattice constant at a surface of the graded layer opposite the substrate. In some cases, a semiconductor structure includes a first region comprising a first epitaxial oxide material; a second region comprising a second epitaxial oxide material; and the graded region located between the first and the second regions.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

A light-emitting element includes a semiconductor epitaxial structure, a passivation layer, a first electrode, a second electrode, and a mechanical buffer layer. The semiconductor epitaxial structure includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer opposite to the first semiconductor layer. The passivation layer is disposed on the semiconductor epitaxial structure. The first electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the first semiconductor layer. The second electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the second semiconductor layer. The mechanical buffer layer is disposed between the passivation layer and the second semiconductor layer. A light-emitting diode package structure including at least one the light-emitting element is also disclosed.

A light-emitting element includes a semiconductor epitaxial structure, a passivation layer, a first electrode, a second electrode, and a mechanical buffer layer. The semiconductor epitaxial structure includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer opposite to the first semiconductor layer. The passivation layer is disposed on the semiconductor epitaxial structure. The first electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the first semiconductor layer. The second electrode is disposed on the passivation layer, and extends through the passivation layer to be electrically connected to the second semiconductor layer. The mechanical buffer layer is disposed between the passivation layer and the second semiconductor layer. A light-emitting diode package structure including at least one the light-emitting element is also disclosed.

An LED display apparatus with a simplified manufacturing process is provided. The LED display apparatus includes a common electrode layer on a first substrate, a second substrate including a first pixel driving device and a second pixel driving device, and a first light emitting device and a second light emitting device on the common electrode layer. The first light emitting device includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second light emitting device includes a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer. As such, it is possible to provide an LED display apparatus with improved manufacturing reliability having at least one unit pixel composed of pixels by using at least one light emitting device integrated with the common electrode layer and at least two individual light emitting devices.

An LED display apparatus with a simplified manufacturing process is provided. The LED display apparatus includes a common electrode layer on a first substrate, a second substrate including a first pixel driving device and a second pixel driving device, and a first light emitting device and a second light emitting device on the common electrode layer. The first light emitting device includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second light emitting device includes a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer. As such, it is possible to provide an LED display apparatus with improved manufacturing reliability having at least one unit pixel composed of pixels by using at least one light emitting device integrated with the common electrode layer and at least two individual light emitting devices.

A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.