Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. A film thickness of the electron blocking layer is not more than 100 nm. An average value of a hydrogen concentration over the electron blocking layer in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not more than 2.0×10.sup.18 atoms/cm.sup.3. A boundary portion between the p-type semiconductor layer and the electron blocking layer includes an n-type impurity.

A light-emitting device is provided. The light-emitting device includes a control part, a light-emitting part, a first electrode, and a second electrode. The control part includes a first semiconductor stack having a two-dimensional gas therein. The light-emitting part includes a second semiconductor stack. The first electrode electrically connects the control part and the light-emitting part. The second electrode electrically connects the control part and the light-emitting part. The control part and the light-emitting part are electrically connected in parallel through the first electrode and the second electrode.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. At least one of the p-type semiconductor layer and the electron blocking layer includes an oxygen-containing portion including oxygen. An oxygen concentration at each position of the oxygen-containing portion in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not less than 2.5×10.sup.16 atoms/cm.sup.3.

A light-emitting element includes: anode; a cathode; a light-emitting layer, and containing a light-emitting material; a hole-transport layer, and containing an organic hole-transport material; a hole-injection layer disposed between the anode and the hole-transport layer, and containing an inorganic hole-transport material; and an organic layer disposed between the hole-transport layer and the hole-injection layer. The organic layer contains an aromatic compound having: a functional group R.sup.1 capable of chemically bonding to the inorganic hole-transport material; a functional group R.sup.2 that is a functional group containing at an end at least one selected from a hydrogen atom, a nitro group, a cyano group, a halogen group, a carboxyl group, an aldehyde group, a hydroxyl group, an ester bond with one to three carbons, an alkyl group with one to three carbons or an amid group; and an aromatic ring to which each of the R.sup.1 and the R.sup.2 bonds.

A light-emitting element includes: anode; a cathode; a light-emitting layer, and containing a light-emitting material; a hole-transport layer, and containing an organic hole-transport material; a hole-injection layer disposed between the anode and the hole-transport layer, and containing an inorganic hole-transport material; and an organic layer disposed between the hole-transport layer and the hole-injection layer. The organic layer contains an aromatic compound having: a functional group R.sup.1 capable of chemically bonding to the inorganic hole-transport material; a functional group R.sup.2 that is a functional group containing at an end at least one selected from a hydrogen atom, a nitro group, a cyano group, a halogen group, a carboxyl group, an aldehyde group, a hydroxyl group, an ester bond with one to three carbons, an alkyl group with one to three carbons or an amid group; and an aromatic ring to which each of the R.sup.1 and the R.sup.2 bonds.

The present disclosure provides a semiconductor structure and a manufacturing method therefor. In the method, for the substrate, the first conductive type semiconductor layer, the light emitting layer and the second conductive type semiconductor layer distributed sequentially from bottom to top, the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in first predetermined regions are removed to form grooves. The second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer in second predetermined regions and third predetermined regions are retained. Layers retained in second predetermined regions form light emitting units arranged in an array. Various layers retained in third predetermined regions form connection posts, each of which connects adjacent light emitting units. Widths of the third predetermined region are smaller than widths of the second predetermined region in the lateral and longitudinal direction of the array.

A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.

A micro light emitting diode (LED) includes: a current spreading layer including a light-emitting surface; a first electrode disposed on the light-emitting surface of the current spreading layer and electrically connected to the current spreading layer; a first cladding layer and a second cladding layer that are stacked on the current spreading layer; an active layer disposed between the first cladding layer and the second cladding layer; a second electrode; and a current guiding part disposed between the second electrode and the second cladding layer, and positioned in a central part of the second cladding layer, the current guiding part being and configured to guide a current to flow away from a side surface of the micro LED.

A micro light emitting diode (LED) includes: a current spreading layer including a light-emitting surface; a first electrode disposed on the light-emitting surface of the current spreading layer and electrically connected to the current spreading layer; a first cladding layer and a second cladding layer that are stacked on the current spreading layer; an active layer disposed between the first cladding layer and the second cladding layer; a second electrode; and a current guiding part disposed between the second electrode and the second cladding layer, and positioned in a central part of the second cladding layer, the current guiding part being and configured to guide a current to flow away from a side surface of the micro LED.