A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.

A display device can include a substrate including a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels; a plurality of first semiconductor light emitting devices disposed in the plurality of first sub-pixels, and configured to generate first color light of a first main wave; a plurality of second semiconductor light emitting devices disposed in the plurality of second sub-pixels, and configured to generate second color light of a second main wave; and a plurality of third semiconductor light emitting devices disposed in the plurality of third sub-pixels, and configured to generate third color light of a third main wave, in which at least some of the plurality of first semiconductor light emitting devices have different light emitting regions to compensate for a wave deviation of the first main wave.

A luminescent material represented by Formula 1, a method of preparing the same, and a light-emitting device including the same:
[A.sup.1.sub.nA.sup.2.sub.3][B.sub.2][X.sup.1.sub.mX.sup.2.sub.5]  Formula 1 A.sup.1, A.sup.2, B, X.sup.1, X.sup.2, n, and m in Formula 1 are as defined in the specification.

A luminescent material represented by Formula 1, a method of preparing the same, and a light-emitting device including the same:
[A.sup.1.sub.nA.sup.2.sub.3][B.sub.2][X.sup.1.sub.mX.sup.2.sub.5]  Formula 1 A.sup.1, A.sup.2, B, X.sup.1, X.sup.2, n, and m in Formula 1 are as defined in the specification.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

A monolithic LED system that is configured to emit a variety of peak wavelengths of light in response to variations in a driving current density includes an n-type region, a p-type region, and a multiple quantum well (MQW) region formed between the n-type region and the p-type region. The MQW region includes parallel layers, each doped with a percentage of Indium to enable a range of light emission between 400 and 600 nm, and one or more V-grooves formed within a portion of the parallel layers. Each of the one or more V-grooves has a lower concentration of the doped percentage of the Indium than other portions of the parallel layers. Transition regions between the one or more V-grooves and the other portions of the parallel layers have a higher concentration of the doped percentage of the Indium which decreases with distance from the one or more V-grooves.

Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*10.sup.19 cm.sup.−3, and the p-contact layer is less than 100 nm thick.

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*10.sup.19 cm.sup.−3, and the p-contact layer is less than 100 nm thick.