A display device includes pixels including a first pixel and a second pixel sequentially disposed in a first direction, each including sub-pixels including a first electrode, a second electrode, and a light emitting element, a driving circuit including driving elements between the pixels, pixel lines connected to the pixels, and driving lines connected to the driving elements. The driving lines are in an area between the first pixel and the second pixel, and include a first driving line extending in a second direction intersecting the first direction in the area between the first pixel and the second pixel. First electrodes included in the sub-pixels of the first pixel and first electrodes included in the sub-pixels of the second pixel are spaced apart by a distance equal to or greater than a width of the first driving line in the first direction, and do not overlap the first driving line.

A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.

A display device includes a substrate including a display area in which pixels are located, and a non-display area, first and second electrodes in the display area and spaced from each other, light emitting elements between the first and second electrodes, connection electrodes electrically connected to the light emitting elements, a fan-out line electrically connected to the pixels in the non-display area, a first pad electrode on the fan-out line, a pad connection electrode on the fan-out line and the first pad electrode, and electrically connecting the fan-out line and the first pad electrode, and a second pad electrode at a same layer as at least one of the connection electrodes, and contacting the first pad electrode.

A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.