Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

The present invention relates to an LED element, more particularly, to a micro-nanofin LED element and a method for manufacturing the same.

In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al.sub.2O.sub.3 single crystals, and wherein the conversion element comprises at least one groove.

In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al.sub.2O.sub.3 single crystals, and wherein the conversion element comprises at least one groove.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

A semiconductor device including an inorganic light-emitting element is provided. The semiconductor device includes the inorganic light-emitting element, a transistor, and a capacitor. The inorganic light-emitting element includes a first film and a second film. The first film contains indium, oxygen, and nitrogen, and the second film contains gallium and nitrogen. The first film has a wurtzite structure or a cubic crystal structure, and the second film has a wurtzite structure and grows on the first film. The first film functions as a cathode electrode of the inorganic light-emitting element. One electrode of the capacitor is formed above the second film included in the inorganic light-emitting element, and the transistor including a metal oxide in a semiconductor layer is formed above the other electrode of the capacitor. The one electrode of the capacitor has a function of reflecting light emitted from the inorganic light-emitting element. The inorganic light-emitting element emits light through the first film.

A semiconductor device including an inorganic light-emitting element is provided. The semiconductor device includes the inorganic light-emitting element, a transistor, and a capacitor. The inorganic light-emitting element includes a first film and a second film. The first film contains indium, oxygen, and nitrogen, and the second film contains gallium and nitrogen. The first film has a wurtzite structure or a cubic crystal structure, and the second film has a wurtzite structure and grows on the first film. The first film functions as a cathode electrode of the inorganic light-emitting element. One electrode of the capacitor is formed above the second film included in the inorganic light-emitting element, and the transistor including a metal oxide in a semiconductor layer is formed above the other electrode of the capacitor. The one electrode of the capacitor has a function of reflecting light emitted from the inorganic light-emitting element. The inorganic light-emitting element emits light through the first film.

Disclosed are an optoelectronic device and a preparation method thereof. The optoelectronic device includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer, and the second semiconductor layer is provided with a layer of nano-diamond structure, and the nano-diamond structure has the same conductivity type as the second semiconductor layer. The method for preparing the optoelectronic device is used to make the optoelectronic device. In the present application, by providing a layer of nano-diamond structure in the second semiconductor layer, the absorption of UV light emitted by the active layer can be effectively avoided, and the beneficial effect of greatly improving the light extraction efficiency of the UV LED can be achieved.

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125° C. to 175° C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125° C. to 175° C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.