A light emitting diode includes a light emitting portion, a first electrode, a first reflecting portion, and a second electrode. The first reflecting portion includes conductive material. The first electrode is in electrical contact with the first reflecting portion. The second electrode is electrically connected to the light emitting portion. The first electrode and the second electrode receive different driving voltages and apply the driving voltage to the light emitting portion to drive the light emitting portion to emit light, the first reflecting portion being configured to reflect the light from the light emitting portion.

A light emitting device includes: a base member having a first surface including a first region; a first electric terminal including a first pin hole, the first pin hole penetrating the base member along a thickness direction of the base member; a second electric terminal including a second pin hole, the second pin hole penetrating the base member along the thickness direction; a first frame provided on the base member and surrounding the first region; a plurality of light emitting elements provided on the base member in the first region; a light-transmissive first member provided inward of the first frame, and covering the plurality of light emitting elements; and a protective element positioned between the base member and the first frame in the thickness direction. When viewed in a direction from the first pin hole toward the second pin hole, the protective element is positioned between the plurality of light emitting elements and the first pin hole and between the plurality of light emitting elements and the second pin hole.

A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the fourth semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the fourth semiconductor layer has sloped sides parallel to the sloped sides of the third semiconductor layer, (iv) a primary electrical contact on the fourth semiconductor layer, wherein the contact is only on the upper surface portion of the fourth semiconductor layer which is parallel to the plane of the LED array precursor, (v) electrically insulating, optically transparent spacers on the sloped sides of the fourth semiconductor layer, the spacers having an internal surface facing the sloped sides of the fourth semiconductor layer and an opposing external surface and (vi) a reflecting layer, electrically conducting extending over the external surface of the spacers, wherein the third semiconductor layer comprises a plurality of quantum well sub-layers, the quantum well sub-layers having a greater thickness on a portion parallel to the plane of the LED array precursor and a reduced thickness on a portion which is not parallel to the plane of the LED array precursor.

A flip-chip semiconductor light-emitting element and a semiconductor light-emitting device are provided. The element includes a substrate and a light-emitting epitaxial layer disposed on the substrate. When electrode structures are formed overlying the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer is omitted, thus a surface of the light-emitting epitaxial layer has a higher flatness. When an insulating reflective layer and an insulating protective layer are subsequently formed, flatness of the insulating reflective layer and the insulating protective layer can be ensured. An overall thickness of the insulating reflective layer and the insulating protective layer is no greater than 3 μm, no abnormal protrusions occur when electrode through holes are formed in the insulating reflective layer and the insulating protective layer, the electrode pads do not have cracks, fractures, and other defects, thus stability and reliability of the device can be enhanced.

A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.

A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.

A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

A light emitting device according to an embodiment of the present disclosure includes multiple light emitting elements. The light emitting elements each include a semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer that are stacked in this order. The first conductive layer has a light emitting surface. The light emitting elements further includes a first electrode in contact with the second conductive layer, and a second electrode in contact with the first conductive layer. The light emitting elements share the first conductive layer and the second electrode with each other. The light emitting elements each include a current path in the first conductive layer from a portion opposed to the first electrode to a portion opposed to the second electrode. The first conductive layer has one or multiple trenches in a region between two current paths adjacent to each other. The light emitting device further includes a light blocking section provided in the one or multiple trenches.