A light-emitting device is provided. The light emitting device includes a support substrate having a light-emitting cell region, a pad region and an edge region, the edge region surrounding the light-emitting cell region and the pad region; a plurality of unit light-emitting devices arranged in a matrix in the light-emitting cell region and spaced apart from each other; a plurality of pads formed in the pad region; partition walls arranged on the plurality of unit light-emitting devices, the partition walls defining a plurality of cell spaces respectively corresponding to the plurality of unit light-emitting devices; and a plurality of fluorescent layers arranged on the plurality of unit light-emitting devices in the plurality of cell spaces. The light-emitting device has a cuboid shape, in which a first length in a first direction is greater than a second length in a second direction.

A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

In an embodiment a method for operating an optoelectronic semiconductor component includes providing the optoelectronic semiconductor component having an optoelectronic semiconductor chip and a casing comprising a matrix material, wherein the semiconductor chip is embedded into the casing, and wherein optically inactive particles have been introduced as crack nuclei into the matrix material of the casing, and operating the optoelectronic semiconductor component such that cavities form entirely within the casing for at least some of the crack nuclei.

A light-emitting carpet or light-emitting trim panel that employs a translucent polymer sheet that has a protective layer and a plurality of cavities configured to accept a plurality of light emitting diodes (LEDs) arranged to generate light where the LEDs are configured to align and project into the polymeric sheet cavities.

A package structure is provided. The package structure includes at least one optoelectronic device, a lead frame, and an encapsulant. The optoelectronic device is disposed on the lead frame. The lead frame includes at least one lead unit that includes a first lead and a second lead. The first lead has a first bonding part and a first pin. The first bonding part has a first inclined sidewall at an upper end of one side away from the second lead. The second lead has a second pin and a carrying part, of which an upper end has a die-attaching region for carrying the optoelectronic device. The encapsulant covers at least the optoelectronic device, the first bonding part, and the carrying part.

A quantum dot color filter substrate, a method for manufacturing the same, and a display device are provided. In the method for manufacturing the quantum dot color filter substrate, a plurality of red (R) color resist blocks, green (G) color resist blocks, and blue (B) color resist blocks each having a structure with a wide top surface and a narrow bottom surface are first formed, and then a quantum dot layer is formed on a silicon substrate, and then the quantum dot layer is contacted with the color resist layer, and then the silicon substrate is peeled off to transfer at least parts of the quantum dot layer in contact with the R color resist blocks and the G color resist blocks to surfaces of the R color resist blocks and the G color resist blocks.

An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

An apparatus and method for manufacturing a display device are provided. The apparatus for manufacturing the display device, includes: a stage, and an ejection head including an ejection outlet, which is open upward in a first direction. The ejection head is disposed under the stage and configured to move in a second direction, which intersects the first direction. “upward in the first direction” is opposite to a direction of gravity.

The invention relates to a housing for an optoelectronic device and to a method for producing such a housing. For producing a lid for the housing, an infrared-transparent material is used, into which at least one glass window is integrated.