A light-emitting device includes a light-emitting element, a light-transmissive member having an upper surface in a rectangular shape and a lower surface to be bonded to the light-emitting element, and a covering member disposed to cover lateral surfaces of the light-transmissive member and lateral surfaces of the light-emitting element such that the upper surface of the light-transmissive member is exposed. The light-transmissive member includes a main portion that constitutes the upper surface in the rectangular shape and a peripheral portion that is positioned around the main portion and has a smaller thickness than the main portion. In lateral surfaces of the peripheral portion, recesses are formed each of which is positioned at a location of a corresponding one of corners of the rectangular shape, and is depressed toward the main portion.

A wavelength conversion element according to the present disclosure includes a wavelength conversion layer having a first surface having a recessed part, and a plurality of air holes, and configured to be excited by light in a first wavelength band to thereby generate light in a second wavelength band different from the first wavelength band, a particle disposed in the recessed part, a light transmissive member disposed so as to cover the recessed part and the particle, a reflecting layer disposed so as to be opposed to the first surface of the wavelength conversion layer, and a base member disposed so as to be opposed to the reflecting layer.

Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

The present disclosure provides an electronic device including a substrate and at least one light emitting unit. The light emitting unit includes a light emitting diode, a protective layer, and a light conversion layer. The protective layer includes a portion having a ripped section and not overlapped with the light emitting diode in a top view direction of the electronic device. The electronic device of the present disclosure may provide an electronic device that may reduce the influence from the outside or a subsequent process on the light emitting diode and improve luminance performance and reliability.

The present disclosure provides an electronic device including a substrate and at least one light emitting unit. The light emitting unit includes a light emitting diode, a protective layer, and a light conversion layer. The protective layer includes a portion having a ripped section and not overlapped with the light emitting diode in a top view direction of the electronic device. The electronic device of the present disclosure may provide an electronic device that may reduce the influence from the outside or a subsequent process on the light emitting diode and improve luminance performance and reliability.

Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer; a third level including a second plurality of light emitting diodes (LEDs), the second plurality of LEDs including a third single crystal layer, where the first level is disposed on top of the second level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer; a third level including a second plurality of light emitting diodes (LEDs), the second plurality of LEDs including a third single crystal layer, where the first level is disposed on top of the second level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.