A light emitting diode package includes: a housing including a cavity region therein; a light emitting diode chip mounted in the cavity region of the housing; and a resin part formed in the cavity region to cover a light emitting surface of the light emitting diode chip. The housing includes a first surface and a second surface perpendicular to a width direction of the housing and spaced apart from each other, and a third surface and a fourth surface perpendicular a longitudinal direction of the housing and spaced apart from each other, in which the first surface and the second surface surround the resin part while the third surface and the fourth surface expose side surfaces of the resin part.

A light emitting diode package includes: a housing including a cavity region therein; a light emitting diode chip mounted in the cavity region of the housing; and a resin part formed in the cavity region to cover a light emitting surface of the light emitting diode chip. The housing includes a first surface and a second surface perpendicular to a width direction of the housing and spaced apart from each other, and a third surface and a fourth surface perpendicular a longitudinal direction of the housing and spaced apart from each other, in which the first surface and the second surface surround the resin part while the third surface and the fourth surface expose side surfaces of the resin part.

Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

The disclosure relates to a micro component structure and a manufacturing method thereof, and a transfer method for a light-emitting diode (LED) chip. The micro component structure includes a substrate (300), multiple stacked adhesive layer structures spaced on a first surface (300a) of the substrate (300), and multiple LED chips (20) correspondingly disposed on the multiple stacked adhesive layer structures. Each of the multiple LED chips (20) has two extraction electrodes (21) at a surface facing toward the multiple stacked adhesive layer structures. Each of the multiple stacked adhesive layer structures includes a photolysis adhesive layer (31′) and a pyrolysis adhesive layer (32′) that are stacked. The photolysis adhesive layer (31′) is in contact with the first surface (300a). The pyrolysis adhesive layer (32′) is located between the two extraction electrodes (21) and has a thickness greater than a height of each of the two extraction electrodes (21).

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

An electronic device is disclosed and includes a conductive layer, a first dielectric layer, and a second dielectric layer, in which the second dielectric layer is disposed on the first dielectric layer, the conductive layer is disposed between the first dielectric layer and the second dielectric layer, the first dielectric layer has a first transmittance for a light, the second dielectric layer has a second transmittance for the light, and the first transmittance is different from the second transmittance.

A display device includes pixel electrodes disposed on a substrate, at least one light-emitting element disposed on each of the pixel electrodes, a planarization layer disposed on the pixel electrodes and filling a space between the at least one light-emitting element, and a common electrode disposed on the planarization layer and the at least one light-emitting element. Each of the light-emitting elements is arranged perpendicular to a top face of each of the pixel electrodes, at least one of the pixel electrodes includes a protrusion protruding toward an adjacent one of the pixel electrodes, and the protrusion overlaps the light-emitting element in a plan view.