A display device and a method of fabricating the same is provided. A display device includes first and second pixel circuit units spaced apart from each other, a first pixel electrode on the first pixel circuit unit, a second pixel electrode on the second pixel circuit unit, a first light-emitting element electrically connected to the first pixel electrode, and for emitting first light, a second light-emitting element electrically connected to the second pixel electrode, and for emitting second light, a first pixel connecting electrode between the first pixel electrode and the first light-emitting element, and a second pixel connecting electrode between the second pixel electrode and the second light-emitting element, wherein the first pixel electrode overlaps with the first light-emitting element, and wherein the second pixel electrode does not overlap with the second light-emitting element.

A display device and a method of fabricating the same is provided. A display device includes first and second pixel circuit units spaced apart from each other, a first pixel electrode on the first pixel circuit unit, a second pixel electrode on the second pixel circuit unit, a first light-emitting element electrically connected to the first pixel electrode, and for emitting first light, a second light-emitting element electrically connected to the second pixel electrode, and for emitting second light, a first pixel connecting electrode between the first pixel electrode and the first light-emitting element, and a second pixel connecting electrode between the second pixel electrode and the second light-emitting element, wherein the first pixel electrode overlaps with the first light-emitting element, and wherein the second pixel electrode does not overlap with the second light-emitting element.

A display device includes first pixel circuit unit, second pixel circuit unit, third pixel circuit unit, and fourth pixel circuit unit spaced from one another, first pixel electrode on the first pixel circuit unit, second pixel electrode on the second pixel circuit unit, third pixel electrode on the third pixel circuit unit, fourth pixel electrode on the fourth pixel circuit unit, first light-emitting element electrically connected to the first pixel electrode, the first light-emitting element configured to emit first light, second light-emitting element electrically connected to the second pixel electrode, the second light-emitting element configured to emit second light, and third light-emitting element electrically connected to the third pixel electrode, the third light-emitting element configured to emit third light. A length of the first light-emitting element in a first direction is greater than each of a length of the second and third light-emitting elements in the first direction.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

A method for manufacturing an electronic device includes: providing a base layer; forming a patterned circuit layer on the base layer, the patterned circuit layer having a first opening; placing an electronic element on the patterned circuit layer; and patterning the base layer to form a second opening which is at least partially overlapped with the first opening. The step of placing the electronic element is performed after the step of forming the patterned circuit layer.

A method for manufacturing an electronic device includes: providing a base layer; forming a patterned circuit layer on the base layer, the patterned circuit layer having a first opening; placing an electronic element on the patterned circuit layer; and patterning the base layer to form a second opening which is at least partially overlapped with the first opening. The step of placing the electronic element is performed after the step of forming the patterned circuit layer.

A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.