The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

According to the present specification, provided is a micro LED display device. The micro LED display device includes a substrate, a supply voltage line on the substrate, and a micro LED area disposed on the supply voltage line. At least one portion of the supply voltage line is disposed at the vertical lower part of the micro LED area.

A display device includes transistors disposed on a substrate, a first protective layer covering the transistors, conductive patterns disposed on the first protective layer, a second protective layer disposed on the conductive patterns, first and second electrodes disposed on the second protective layer, at least one light emitting disposed between the first and second electrodes, and a first contact electrode disposed on the first electrode and contacting an end of at least one light emitting element, and a second contact electrode disposed on the second electrode and contacting another end of the at least one light emitting element. The conductive patterns include first and second conductive patterns respectively overlapping the first and second electrodes. The first electrode is connected to the first conductive pattern. The second protective layer includes an opening hole exposing a portion of the second conductive pattern.

A display device according to one embodiment of the present disclosure may include a substrate including a plurality of concave portions, light emitting elements disposed at the plurality of concave portions, a first insulating layer disposed on the substrate and the light emitting element, a transistor disposed on the first insulating layer and including an active electrode and a gate electrode, a first hole included in the active electrode, a second hole included in the first insulating layer, and a connection electrode disposed in the first hole and the second hole, wherein the light emitting element may be electrically connected to the active electrode by the connection electrode.

A display device according to one embodiment of the present disclosure may include a substrate including a plurality of concave portions, light emitting elements disposed at the plurality of concave portions, a first insulating layer disposed on the substrate and the light emitting element, a transistor disposed on the first insulating layer and including an active electrode and a gate electrode, a first hole included in the active electrode, a second hole included in the first insulating layer, and a connection electrode disposed in the first hole and the second hole, wherein the light emitting element may be electrically connected to the active electrode by the connection electrode.

A display backplane is provided, including a base, wherein pixel circuits, bonding electrodes, and bonding connection wires are on the base; the bonding electrodes are coupled to the bonding connection wires in a one-to-one correspondence; the bonding electrodes and the bonding connection wires are on two opposite surfaces of the base; the pixel circuits and the bonding connection wires are on a same side of the base; one end of each bonding connection wire is coupled to the bonding electrode through the first via in the base; the other end of each of at least some bonding connection wires is coupled to the pixel circuit; and an orthographic projection of at least one of the bonding electrodes and the bonding connection wires on the base is not coincident with an orthographic projection of the pixel circuit on the base.

The application discloses a bonding method, a display backplane and a system for manufacturing the display backplane. The method includes: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device to transfer the plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads include two of the first metal bumps; and providing a plurality of LED flip chips, and transferring the plurality of LED flip chips to the TFT substrate by using the transfer device to bond electrodes of each of the LED flip chips to one pair of the metal pads respectively.

The application discloses a bonding method, a display backplane and a system for manufacturing the display backplane. The method includes: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device to transfer the plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads include two of the first metal bumps; and providing a plurality of LED flip chips, and transferring the plurality of LED flip chips to the TFT substrate by using the transfer device to bond electrodes of each of the LED flip chips to one pair of the metal pads respectively.