Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A LED module includes a support including a heat dissipation pad; a circuit board on the support and including contact pads and an electrical connection terminal electrically connected to the contact pads; an LED device including a wiring board having lower and upper surfaces, a lower wiring on the lower surface and facing the heat dissipation pad, an upper wiring on the upper surface and electrically insulated from the lower wiring, contact structures at one side of the upper wiring, an LED chip mounted on another side of the upper wiring, a wavelength conversion film on the LED chip, and a reflective structure covering the upper surface such that a portion of the contact structures and the wavelength conversion film is exposed; a bonding wire electrically connecting the contact pads and the contact structures; and a conductive bump between the heat dissipation pad and the lower wiring.

An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

A light-emitting device includes a mounting substrate having a first surface and a second surface opposite to the first surface, the mounting substrate having a first end portion at an end of the mounting substrate; light-emitting elements mounted on the first surface of the mounting substrate other than the first end portion; first terminals provided on the first surface at the first end portion of the mounting substrate and connected to the light-emitting elements; and second terminals provided on the second surface at the first end portion of the mounting substrate and connected to the light-emitting elements.

A light-emitting device includes a mounting substrate having a first surface and a second surface opposite to the first surface, the mounting substrate having a first end portion at an end of the mounting substrate; light-emitting elements mounted on the first surface of the mounting substrate other than the first end portion; first terminals provided on the first surface at the first end portion of the mounting substrate and connected to the light-emitting elements; and second terminals provided on the second surface at the first end portion of the mounting substrate and connected to the light-emitting elements.

An embodiment of the present disclosure provides a display module, including a display panel: a cover plate on a light-emitting side of the display panel; and a heat dissipation layer on a back side of the display panel. The back side faces away from the light-emitting side. Edges of the cover plate, the display panel and the heat dissipation layer are bent toward the back side of the display panel to form a shape-matched arc surface. The display panel further includes a planar portion and edges surrounding the planar portion. At least part of an edge of an orthographic projection of the display module on a plane where the planar portion of the display panel is located is arc. The heat dissipation layer includes a stretchable structure in an arc surface region having an arc edge.

A method for manufacturing a light-emitting device includes providing a transparent member having a protrusion formed at an upper surface of the transparent member. A first resin portion is placed on the protrusion in which the first resin portion has a solid form and is made from a first resin material of which the viscosity decreases when heated. A light-emitting element is placed on the first resin portion, the light-emitting element is caused to be self-aligned with respect to the protrusion by reducing a viscosity of the first resin portion by heating to a first temperature. The first resin portion is solidified by cooling.

According to an embodiment of the disclosure, a flexible display device includes a display part including a light emitting element disposed on a base layer, and a panel cover disposed on a rear surface of the display part and including a heat dissipation layer. The heat dissipation layer includes a base heat dissipation layer, and a heat dissipation pattern patterned on the base heat dissipation layer.

A system for peak-to-average-power ratio (PAPR) reduction of a frequency shifted plurality of digital broadcast signals taking into account the combined signal peaks in order to transmit the signals more efficiently in a single broadcast transmission system. The PAPR algorithm takes into account a rotating constellation phase offset for the shifted signals corresponding to the amount of applied frequency shift. In the case of a dual sideband In-Band-On-Channel (IBOC) signal typically used in conjunction with an FM carrier in the center, the sidebands can be interleaved to create a new IBOC signal definition and take the place of the FM carrier for an all-digital transmission that is backward compatible with IBOC receivers allowing for a gradual migration to all digital broadcasting.