A light-emitting device includes: a substrate; n light-emitting elements (n being a natural number of 2 or more) mounted on the substrate, each comprising a first bonding member electrically connected to a first semiconductor layer, and a second bonding member electrically connected to a second semiconductor layer; and n+1 interconnects provided on the substrate, the n+1 interconnects comprising a first interconnect comprising a first external connection portion, a second interconnect comprising a second external connection portion, and a third interconnect comprising a third external connection portion. In a top-view, the first light-emitting element is located between a first side of the substrate and a second light-emitting element, and the second light-emitting element is located between a first light-emitting element and a second side.

An LED module includes a light emitting part, a board part electrically connected to the light emitting part, and a heat radiating part disposed on a lower side of the light emitting part and the board part, and a surface treatment is applied to the heat radiating part.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

An example display apparatus includes a liquid crystal panel; a light source plate including a printed circuit board disposed behind the liquid crystal panel, and a light source module mounted on the printed circuit board to supply light to the liquid crystal panel. The light source module includes a light emitting diode (LED) chip; a light guide provided to guide the light emitted from the LED chip; a light converter provided to convert a wavelength of light guided through the light guide, and disposed on a first surface of the light guide and attached to the printed circuit board; and a distributed Bragg reflector (DBR) layer disposed on a second surface of the light guide body and provided to improve a light conversion efficiency of the light conversion member.

A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

LED packages are disclosed capable of emitting a range of colors including white light, while still emitting that can have a high color rendering index (CRI). The LED packages can have a simplified reflective cup arrangement and improved lead frame design. The LED packages according to the present invention comprise one or more LED WITH PHOSPHORs for high CRI lighting applications, along with multiple narrowband emitters (e.g. RGB LEDs), but do not have a dam or partition to segregate the LED WITH PHOSPHOR from the multiple emitters. This results in a LED package that is less complex and easier to manufacture, while still providing the desired flexibility in LED package emissions.