A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.

Provided is a wafer container including a frame having a first sidewall and a second sidewall extending along a YZ plane; a plurality of first support structures disposed on the first sidewall and arranged along a Z direction; and a plurality of second support structures disposed on the second sidewall and arranged along the Z direction. One of the plurality of first support structures is horizontally aligned with a corresponding second support structure to constitute a wafer holder. The wafer holder includes a plurality of island structures to hold a wafer in a XY plane, and the plurality of island structures are separated to each other along a X direction. A method for holding at least one wafer is also provided.

Provided is a wafer container including a frame and at least a pair of the stents. The frame has opposite sidewalls. The at least a pair of the stents is respectively disposed on the sidewalls of the frame, wherein the at least a pair of the stents is configured to provide at least three supporting points to support at least one wafer. A method for holding at least one wafer is also provided.

A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

The present disclosure relates to a substrate heating device capable of effectively suppressing the generation of cracks. The substrate heating device including: a body having a substrate seating element on which a substrate is seated, thereby supporting the substrate; a first heating element positioned in an inner area of the body; a second heating element positioned in an outer area surrounding the inner area of the body; a power transfer wire configured to transfer a current to the second heating element across the inner area of the body; a heater connector configured to supply a current to the power transfer wire; and a connector connecting element connected from the heater connector to the power transfer wire, wherein the connector connecting element is made of molybdenum-tungsten alloy including molybdenum and tungsten.

A processing method for performing laser processing on a wafer includes: a reflected light detecting step of irradiating the wafer with light for state detection along a plurality of planned dividing lines, and detecting reflected light of the light from an upper surface of the wafer; a region setting step of setting a first region and a second region to the planned dividing lines based on the reflected light; a first laser processing step of performing laser processing on the first region under a first laser processing condition; and a second laser processing step of performing laser processing on the second region under a second laser processing condition.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.