A cutting apparatus includes a cutting unit including a cutting blade that has a cutting edge for cutting a dresser board. An elastic wave detection sensor is disposed in the cutting unit, for detecting an elastic wave produced when the dresser board is cut. The elastic wave detection sensor produces an output signal representing the detected elastic wave when the cutting blade cuts the dresser board and is dressed thereby, the output signal being variable as the cutting blade is progressively dressed by the dresser board. A control unit stores in advance, as a threshold value, the value of the output signal when the dressing of the cutting blade is completed. The control unit stops cutting the dresser board with the cutting blade and finishes the dressing of the cutting blade when the output signal produced by the elastic wave detection sensor reaches the threshold value.

A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.

In a device and a method for aligning and holding a plurality of singulated semi-conductor components in receiving pockets of a terminal carrier that are separated from each other, the terminal carrier has spring elements, which are part of a spring plate. The spring plate has a plurality of recesses disposed next to each other for forming a corresponding plurality of receiving pockets for the semi-conductor components, wherein the spring elements are formed from the spring plate in one piece.

Provided is a wafer container including a frame and at least a pair of the stents. The frame has opposite sidewalls. The at least a pair of the stents is respectively disposed on the sidewalls of the frame, wherein the at least a pair of the stents is configured to provide at least three supporting points to support at least one wafer. A method for holding at least one wafer is also provided.

A processing method for performing laser processing on a wafer includes: a reflected light detecting step of irradiating the wafer with light for state detection along a plurality of planned dividing lines, and detecting reflected light of the light from an upper surface of the wafer; a region setting step of setting a first region and a second region to the planned dividing lines based on the reflected light; a first laser processing step of performing laser processing on the first region under a first laser processing condition; and a second laser processing step of performing laser processing on the second region under a second laser processing condition.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.

Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.

Exemplary semiconductor component assembly platforms include a base frame having a frame body extending from a first end to a second end. The component assembly platforms include a telescoping frame movably connected to the base frame and a component support movably connected to the telescoping frame. Semiconductor component assembly platforms exhibit a compressed position and a fully extended position. In a compressed position, a first end of the telescoping frame is disposed substantially above a first end of the base frame. In an extended position, the first end of the telescoping frame is disposed between the first end and the second end of the base frame, and a second end of the component support is disposed outward of the second end of the telescoping frame. The component assembly platform may be characterized by having a fully extended length that is at least about 1.2 times greater than the compressed length.