H01L2223/54413

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
20220013469 · 2022-01-13 · ·

A semiconductor device includes: a semiconductor wafer with a chip region and an edge region and with an identification mark formed on one surface of the semiconductor wafer in the edge region; conductive connectors formed on the one surface of the semiconductor wafer in the chip region; and dummy conductive connectors formed on the one surface of the semiconductor wafer in the edge region, wherein the dummy conductive connectors do not overlap with the identification mark.

SEMICONDUCTOR PACKAGE
20230326871 · 2023-10-12 ·

A semiconductor package includes an encapsulation layer encapsulating at least one semiconductor chip, and a redistribution level layer disposed on the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer insulating the redistribution layer, a laser mark area is disposed on the redistribution layer and the redistribution insulating layer, and the redistribution insulating layer of the laser mark area comprises a plurality of mesh-type redistribution insulating patterns arranged apart from each other on a plane and surrounded by the redistribution layer. The redistribution level layer includes a laser mark insulating layer located on the redistribution layer and the redistribution insulating layer, wherein the laser mark insulating layer includes a laser mark exposing the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.

SEMICONDUCTOR PACKAGE
20230317590 · 2023-10-05 · ·

A semiconductor package is provided. The semiconductor package includes: a first redistribution substrate; a semiconductor chip provided on the first redistribution substrate; a molding layer provided on the first redistribution substrate and the semiconductor chip; and a second redistribution substrate provided on the molding layer. The second redistribution substrate includes: redistribution patterns spaced apart from one another; a first dummy conductive pattern spaced apart from the redistribution patterns; an insulating layer provided on the first dummy conductive pattern; and a marking metal layer provided on the insulating layer and spaced apart from the first dummy conductive pattern. Sidewalls of the marking metal layer overlap the first dummy conductive pattern along a vertical direction perpendicular to an upper surface of the first redistribution substrate.

PHOTOVOLTAIC CELL, METHOD FOR FORMING SAME, AND PHOTOVOLTAIC MODULE
20230282754 · 2023-09-07 ·

A photovoltaic cell is provided, including a substrate; a marked region on a surface of the substrate, configured to mark product information of the photovoltaic cell; a first texture structure in the marked region on the surface of the substrate, including at least one first protrusion structure and at least one second protrusion structure, a respective first protrusion structure of the at least one first protrusion structure has a recessed top surface recessing toward a bottom surface of the respective first protrusion structure, and a respective second protrusion structure of the at least one second protrusion structure includes a pyramid structure; and a second texture structure disposed on a part of the surface of the substrate outside the marked region, where the second texture structure includes at least one third protrusion structure, and a respective third protrusion structure of the at least one third protrusion structure includes a pyramid structure.

Electronic apparatus and method of manufacturing the same

An electronic apparatus includes: a circuit board; a driving chip mounted on the circuit board; a shield-can including a top surface and a side surface extending in a direction from the top surface to the circuit board, wherein the top surface covers the driving chip; and a first film disposed on the shield-can and including a first opening that exposes a part of the top surface of the shield-can.

Method and system for mass assembly of thin-film materials

A system includes a separation tool that separates a carrier wafer to form a plurality of chiplet carriers. The carrier wafer having sheets of thin film material attached. A sensor and processor of the system determine an orientation of the portions of the sheets of thin film material relative to the chiplets to determine a mapping therebetween. A fluid carrier of the system places the chiplet carriers on an assembly surface in a disordered pattern. The system includes a micro assembler that arranges the chiplet carriers from the disordered pattern to a predetermined pattern based on the mapping. A carrier of the system transfers the portions of the thin film material from the chiplet carriers to a target substrate.

Systems for direct transfer of semiconductor device die

A system for performing a direct transfer of a semiconductor device die includes a first conveyance mechanism to convey a first substrate, and a second conveyance mechanism to convey a second substrate with respect to the first substrate. The first substrate includes a first side and a second side, and the semiconductor device die is disposed on the first side of the first substrate. The second conveyance mechanism includes a first portion and a second portion to clamp the second substrate adjacent to a first side of the first substrate. The first portion of the second conveyance mechanism has a concave shape and the second portion of the second conveyance mechanism has a convex counter shape corresponding to the concave shape of the first portion. The system also includes a transfer mechanism disposed adjacent to the first conveyance mechanism to effectuate the direct transfer.

Direct transfer of semiconductor devices from a substrate

A method includes loading a wafer tape into a first frame, the wafer tape having a first side and a second side, a first semiconductor device die being disposed on the first side of the wafer tape. A substrate is loaded into a second frame, the substrate including a second semiconductor device die onto which the first semiconductor device die is to be transferred. A needle is oriented to a position adjacent to the second side of the wafer tape, the needle extending in a direction toward the wafer tape, and a needle actuator connected to the needle is activated to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

METHOD AND SYSTEM FOR MASS ASSEMBLY OF THIN-FILM MATERIALS
20220388295 · 2022-12-08 ·

A system includes a separation tool that separates a carrier wafer to form a plurality of chiplet carriers. The carrier wafer having sheets of thin film material attached. A sensor and processor of the system determine an orientation of the portions of the sheets of thin film material relative to the chiplets to determine a mapping therebetween. A fluid carrier of the system places the chiplet carriers on an assembly surface in a disordered pattern. The system includes a micro assembler that arranges the chiplet carriers from the disordered pattern to a predetermined pattern based on the mapping. A carrier of the system transfers the portions of the thin film material from the chiplet carriers to a target substrate.

SECURE CHIPS WITH SERIAL NUMBERS

An electronic device comprising a semiconductor chip which comprises a plurality of structures formed in the semiconductor chip, wherein the semiconductor chip is a member of a set of semiconductor chips, the set of semiconductor chips comprises a plurality of subsets of semiconductor chips, and the semiconductor chip is a member of only one of the subsets. The plurality of structures of the semiconductor chip includes a set of common structures which is the same for all of the semiconductor chips of the set, and a set of non-common structures, wherein the non-common structures of the semiconductor chip of the subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a first portion of the non-common structures and a first portion of the common structures form a first non-common circuit, wherein the first non-common circuit of the semiconductor chips of each subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a second portion of the non-common structures is adapted to store or generate a first predetermined value which uniquely identifies the first non-common circuit, wherein the first predetermined value is readable from outside the semiconductor chip by automated reading means.