The present invention provides a shield package having a highly distinctive pattern formed on a surface of a shield layer. The shield package of the present invention includes a package in which an electronic component is sealed with a resin layer, and a shield layer covering the package, wherein a surface of the resin layer includes a drawing area drawn with lines and/or dots by aggregation of multiple grooves, and a non-drawing area other than the drawing area, multiple depressions originating from the grooves are formed on a surface of the shield layer on the drawing area, and the depressions are aggregated to draw a pattern with lines and/or dots.

A method of manufacturing a silicon carbide semiconductor device. The method includes providing a starting substrate containing silicon carbide, epitaxially growing an epitaxial layer on the starting substrate to thereby form a semiconductor wafer, forming a plurality of scribe lines at a surface of the semiconductor wafer to delineate a plurality of chip regions, forming a mark in the epitaxial layer, the mark being formed in a marking region that is outside the scribe lines, inspecting the epitaxial layer for a crystal defect, forming a device element structure in at least one of the plurality of chip regions, dicing the semiconductor wafer into a plurality of individual semiconductor chips along the plurality of scribe lines, and identifying, as a conforming product candidate, one of the plurality of semiconductor chips that is free of the crystal defect detected during the inspecting.

A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.

An optical apparatus includes a folding mirror configured to direct first and second illumination lights on first and second alignment marks respectively and reflect first and second reflected lights reflected from the first and second alignment marks in different horizontal directions respectively, first and second lenses arranged respectively in optical paths of the first and second reflected lights reflected from the first and second reflective surfaces of the folding mirror, first and second reflection portions configured to reflect the first and second reflected lights passing through the first and second lenses respectively, and a beam splitter prism configured to divide an illumination light incident through a first surface into the first and second illumination lights and direct to the first and second reflection portions, and transmit the first and second reflected lights reflected by the first and second reflection portions through a second surface.

A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units and a corresponding device for alignment and contact.

A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

According to one embodiment, a display device includes a display panel including a first substrate, and a wiring board mounted on a mounting portion of the first substrate. The display panel includes a first terminal and a second terminal located in the mounting portion, a first alignment mark located in the mounting portion and located between the first terminal and the second terminal, a first wiring line connected to the first terminal, and a second wiring line connected to the second terminal. The wiring board includes a first connection wiring line connected to the first terminal, a second connection wiring line connected to the second terminal, and a second alignment mark located between the first connection wiring line and the second connection wiring line.

A substrate for an electronic device may include one or more layers. The substrate may include a cavity defined in the substrate. The cavity may be adapted to receive a semiconductor die. The substrate may include a fiducial mark positioned proximate the cavity. The fiducial mark may be exposed on a first surface of the substrate. The fiducial mark may include a first region including a dielectric filler material. The fiducial mark may include a second region including a conductive filler material. In an example, the second region surrounds the first region. In another example, the dielectric filler material has a lower reflectivity in comparison to the conductive filler material to provide a contrast between the first region and the second region.