Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

A method of manufacturing a semiconductor chip includes preparing a semiconductor substrate having an active surface on which a device layer is provided and an inactive surface opposite to the active surface, the device layer having a integrated circuit (IC) areas and a cut area provided between adjacent IC areas; forming anti-collision recesses in regions of the cut area that are adjacent to corners of the IC areas, each of the anti-collision recesses having rounded internal sidewalls, each of the rounded internal sidewalls corresponding to a respective corner of the adjacent corners; forming a modified portion in the semiconductor substrate by irradiating a cut line of the cut area with a laser; polishing the inactive surface of the semiconductor substrate, wherein cracks propagate from the modified portion in a vertical direction of the semiconductor substrate; and separating the IC areas from each other along the cracks to form semiconductor chips.

A method of manufacturing a semiconductor structure includes the following operations. A wafer includes a crystal orientation represented by a family of Miller indices comprising <lmn>, wherein l.sup.2+m.sup.2+n.sup.2=1. A first chip and a second chip are over the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. A first included angle between the first direction and the crystal orientation is greater than or equal to 0 degree and less than 45 degrees.

A method including: a step of preparing a substrate that includes a first layer having a dicing region and a mark, and including a semiconductor layer, and a second layer including a metal film; a step of removing the metal film, to expose the semiconductor layer corresponding to a first region that corresponds to the mark; a step of smoothing a surface of the exposed semiconductor layer; a step of imaging the substrate, with a camera sensing predetermined electromagnetic waves, to detect a position of the mark through the semiconductor layer, and calculating a second region corresponding to the dicing region; and a step of removing the metal film, to expose the semiconductor layer corresponding to the second region. In the smoothing step, the surface of the semiconductor layer is smoothed so as to have a surface roughness of 1/4 or less of a wavelength of the predetermined electromagnetic waves.

A method of manufacturing a silicon carbide semiconductor device. The method includes providing a starting substrate containing silicon carbide, epitaxially growing an epitaxial layer on the starting substrate to thereby form a semiconductor wafer, forming a plurality of scribe lines at a surface of the semiconductor wafer to delineate a plurality of chip regions, forming a mark in the epitaxial layer, the mark being formed in a marking region that is outside the scribe lines, inspecting the epitaxial layer for a crystal defect, forming a device element structure in at least one of the plurality of chip regions, dicing the semiconductor wafer into a plurality of individual semiconductor chips along the plurality of scribe lines, and identifying, as a conforming product candidate, one of the plurality of semiconductor chips that is free of the crystal defect detected during the inspecting.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

An inspection method for a divided wafer includes a wafer lamination step of stacking a transfer wafer on top of a wafer that has been divided into a plurality of chips, a particle transfer step of, after the wafer lamination step is carried out, positioning the transfer wafer on a lower side and the divided wafer on an upper side and applying a vibration to the wafer stacked on the transfer wafer, to drop particles adhering to side surfaces of the chips onto the transfer wafer, and an inspection step of, after the particle transfer step is carried out, inspecting the particles on the transfer wafer.

Provided is a laser mark printing method and a method of producing a laser-marked silicon wafer that can reduce the machining strain left around dots constituting a laser mark. In a method of printing a laser mark having a plurality of dots on a silicon wafer, the plurality of dots are formed using laser light having a wavelength in the ultraviolet region.

The present application provides an alignment method for backside photolithography process of the wafer, the alignment method includes: cutting the wafer, and using at least two edges formed by cutting as the first alignment mark; bonding the front side of the wafer to the wafer pad to form a composite wafer; aligning the first alignment mark with the corresponding second alignment mark on the photomask for backside photolithography. This method is not limited by wafer thickness and material, and reduces the secondary input of the photolithography equipment; meanwhile, the probability of fragments of thin wafers in the photolithography process can be reduced, and the yield of the product is effectively improved.