A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

An electronic device includes a first substrate, a first conductive element, a second conductive element and a circuit board. The first substrate has a first surface, a first side surface and a second surface. The first side surface is connected between the first surface and the second surface. The first conductive element is disposed on the first surface of the first substrate. The second conductive element is electrically connected to the first conductive element. The second conductive element includes a first part and a second part. The first part is disposed on the first side surface of the first substrate, the second part is disposed on the second surface of the first substrate, and the first part is connected to the second part. The circuit board is disposed on the second surface of the first substrate and electrically connected to the second part of the second conductive element.

An electronic device includes a first substrate, a first conductive element, a second conductive element and a circuit board. The first substrate has a first surface, a first side surface and a second surface. The first side surface is connected between the first surface and the second surface. The first conductive element is disposed on the first surface of the first substrate. The second conductive element is electrically connected to the first conductive element. The second conductive element includes a first part and a second part. The first part is disposed on the first side surface of the first substrate, the second part is disposed on the second surface of the first substrate, and the first part is connected to the second part. The circuit board is disposed on the second surface of the first substrate and electrically connected to the second part of the second conductive element.

Apparatuses relating generally to a vertically integrated microelectronic package are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface. A first microelectronic device is coupled to the upper surface of the substrate. The first microelectronic device is a passive microelectronic device. First wire bond wires are coupled to and extend away from the upper surface of the substrate. Second wire bond wires are coupled to and extend away from an upper surface of the first microelectronic device. The second wire bond wires are shorter than the first wire bond wires. A second microelectronic device is coupled to upper ends of the first wire bond wires and the second wire bond wires. The second microelectronic device is located above the first microelectronic device and at least partially overlaps the first microelectronic device.

An emitter for an LED-based lighting device can incorporate flip-chip LEDs, in which all electrical contacts are disposed on the bottom surface of the chip. The emitter base can be a multilayer high-temperature cofired ceramic (HTCC) substrate, with metal traces formed between the layers and vias through the layers to join traces in different layers, thereby providing electrical connectivity to each LED. The paths can be arranged such that current can be supplied independently to different subsets of the LEDs. The top layer of the emitter base is fabricated with exposed vias at the top surface. Metal pads are then printed onto the exposed vias on the top surface, and flip-chip LEDs are bonded to the metal pads, e.g., using solder.

A flange tab system includes a first member having a first-member-first-portion and a first-member-second-portion, a second member having a second-member-first portion and a second-member-second-portion, a third member, and a ring-like member. The flange tab system provides an electrical fitting for electrical current flow between pipelines or other structures. The flange tab system is configured to secure a wire to a pipeline for cathodic protection and various other applications.

A semiconductor device includes: a printed substrate having a through hole from an upper face to a lower face thereof; a first semiconductor element mounted on the printed substrate; an interposer mounted on the upper face of the printed substrate; a second semiconductor element adjacent to the interposer and arranged to overlap with the through hole; and a bonding wire coupling a first pad to a second pad, the first pad being on an upper face of the interposer and being positioned on the second semiconductor element side, the second pad being on an upper face of the second semiconductor element and being positioned on the interposer side, wherein the interposer has an edge face protruding with respect to a wall face of the through hole of the printed substrate toward the second semiconductor element, and the edge face faces with an edge face of the second semiconductor element.

The present technology relates to a solid state imaging device that enables a reduction in the manufacturing cost of the solid state imaging device, and an electronic apparatus. A first substrate including a pixel circuit having a pixel array unit and a second substrate including a first and a second signal processing circuit arranged side by side across a scribe area are stacked. The second substrate includes a first moisture-resistant ring surrounding at least part of a periphery of the first signal processing circuit, a second moisture-resistant ring surrounding at least part of a periphery of the second signal processing circuit, a third moisture-resistant ring surrounding at least part of a periphery of the second substrate in a layer different from the first and second moisture-resistant rings, and a barrier unit separating a first area between the first and second moisture-resistant rings and a second area. The present technology can be applied to, for example, a solid state imaging device such as a CMOS image sensor.

An electronic sub-module includes a leadframe, a semiconductor chip disposed on the leadframe and an encapsulation material disposed on the leadframe and on the semiconductor chip. The semiconductor chip has a first contact pad on a first main face of the semiconductor chip. The sub-module also includes a first contact element on a first main face of the electronic sub-module. The first contact element is electrically connected with the first contact pad. A surface area of the first contact element is greater than a surface area of the first contact pad.