A light emitting device disclosed in an embodiment includes: a light emitting chip including a light emitting part, including a plurality of semiconductor layers, and a first electrode and a second electrode under the light emitting part; a first support member under the light emitting chip; a second support member under the first support member; a first lead electrode connected to the first electrode and a second lead electrode connected to the second electrode, in the second support member, the first lead electrode being separated from the second lead electrode; a protection chip disposed between the first and second lead electrodes; and a reflective member disposed on a periphery of the light emitting chip, wherein the first support member includes a ceramic material between the second support member and the light emitting chip.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor device includes: a printed substrate having a through hole from an upper face to a lower face thereof; a first semiconductor element mounted on the printed substrate; an interposer mounted on the upper face of the printed substrate; a second semiconductor element adjacent to the interposer and arranged to overlap with the through hole; and a bonding wire coupling a first pad to a second pad, the first pad being on an upper face of the interposer and being positioned on the second semiconductor element side, the second pad being on an upper face of the second semiconductor element and being positioned on the interposer side, wherein the interposer has an edge face protruding with respect to a wall face of the through hole of the printed substrate toward the second semiconductor element, and the edge face faces with an edge face of the second semiconductor element.

The invention relates to a method for producing an LED module (1) and comprises at least the following steps:providing at least one LED chip (4) on a substrate material (2), anddispensing a not-cured (flowable/liquid) potting compound (3) on top of the LED chip (4), said potting compound (3) containing at least one type of luminescent particles and preferably a matrix material. During the step of dispensing, a predetermined potential is applied directly or indirectly to at least one LED chip (4).

Provided is a method of processing a NAND flash memory device including at least one NAND flash memory and a memory controller configured to control the at least one NAND flash memory. The method includes etching a portion of a first substrate of the NAND flash memory device to expose a wire connecting the at least one NAND flash memory and the memory controller to each other, dividing the wire into a first wire and a second wire by etching a first area of the etched first substrate, and connecting, to a second substrate, the first wire to which the at least one NAND flash memory is connected.

An electronic sub-module includes a leadframe, a semiconductor chip disposed on the leadframe and an encapsulation material disposed on the leadframe and on the semiconductor chip. The semiconductor chip has a first contact pad on a first main face of the semiconductor chip. The sub-module also includes a first contact element on a first main face of the electronic sub-module. The first contact element is electrically connected with the first contact pad. A surface area of the first contact element is greater than a surface area of the first contact pad.

An electronic module includes a circuit board, having a carrier layer, the carrier layer having a plurality of recess areas in a main surface thereof, and a plurality of electronic sub-modules, each one of the sub-modules being disposed in one of the recess areas and each one of the sub-modules having a carrier, a semiconductor chip disposed on the carrier, and an encapsulation material disposed on the carrier and on the semiconductor chip.

Apparatuses relating generally to a vertically integrated microelectronic package are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface. A first microelectronic device is coupled to the upper surface of the substrate. The first microelectronic device is a passive microelectronic device. First wire bond wires are coupled to and extend away from the upper surface of the substrate. Second wire bond wires are coupled to and extend away from an upper surface of the first microelectronic device. The second wire bond wires are shorter than the first wire bond wires. A second microelectronic device is coupled to upper ends of the first wire bond wires and the second wire bond wires. The second microelectronic device is located above the first microelectronic device and at least partially overlaps the first microelectronic device.

An electronic device includes a substrate structure, a first conductive element, a second conductive element, a third conductive element, a fourth conductive element, and a side wiring. The substrate structure has a first surface, a second surface and a side surface connected between the first surface and the second surface. The first conductive element is disposed on the first surface of the substrate structure. The second conductive element is disposed on the first conductive element. The third conductive element is disposed on the second surface of the substrate structure. The fourth conductive element is disposed on the third conductive element. The side wiring is disposed on the side surface of the substrate structure and in contact with the second conductive element and the fourth conductive element. The side wiring, the second conductive element, and the fourth conductive element comprise at least one same material.