There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a capillary transport device capable of inserting, without manpower, a capillary into a mounting section of an ultrasonic horn. According to an aspect of the present invention, a capillary transport device includes: a first tube 17 for transporting a capillary 13; an ultrasonic horn 11 with a mounting section for mounting the capillary; a first movement mechanism for relatively moving the ultrasonic horn and a first end 17a of the first tube; and a mechanism for blowing gas into a second end 17b of the first tube.

A wire bonding apparatus includes: a capillary, performing predetermined processing on a workpiece and movable with respect to the workpiece; an optical mechanism, moving together with the capillary; and a controller. The optical mechanism includes: a first imaging unit, acquiring a first image obtained by imaging a standard point set within an imaging range; and a second imaging unit, acquiring a second image obtained by imaging a reference point formed at a predetermined distance from the capillary. The controller positions the capillary with respect to the workpiece based on the first image, and calculates a positioning correction amount of the capillary based on the second image.

A bonding apparatus includes: a clamper able to clamp a wire between a pair of arms; a horn, in which a first through hole able to hold a capillary, and a second through hole adjacent to the first through hole and penetrating the horn in an up-down direction are further formed; and a bonding stage able to carry a workpiece. An alignment method for aligning a horn and a damper of a bonding apparatus with each other includes: disposing a mirror surface to be parallel to a bonding stage; aligning a mirror image of a second through hole reflected on the mirror surface with a center of the second through hole when the mirror surface is viewed through the second through hole; and aligning the damper based on a position of the mirror image and the horn.

A wire bonding device for bonding a wire to a target includes: a prediction part which predicts, based on time-series data of a diagnosis result regarding an operation of the wire bonding device, a transition of a change from the diagnosis result in an initial state; and a setting part which sets a time point at which the prediction part predicts that an amount of change from the diagnosis result in the initial state reaches a first threshold value as a time point for performing maintenance of the wire bonding device. The wire bonding device allows the maintenance to be performed suitably.

A bump-forming device (1) includes a bonding tool (15) and a bonding controller (10). The bonding controller is configured to execute a crimping step (S14), a delivery step (S15), a pressing step (S16), and a cutting step (S17), and of the trajectories of the bonding tool (15), at least the trajectory in the delivery step (S15) is determined on the basis of a first parameter relating to a wire (w) and a second parameter relating to the shape of the bonding tool (15).

A semiconductor device has a semiconductor chip having a plurality of pads and wires electrically connected to the plurality of pads, respectively. The plurality of pads includes a plurality of first pads which is electrically connected to a circuit included in the semiconductor chip and to which first wires are bonded and a second pad which is an electrode pad for wire connection test and to which a second wire is bonded.

A bonding region is specified by having a horizontal line partially constituting crosshairs displayed on a monitor of a wire bonding apparatus superimposed on a first line segment of a first marker, and having a vertical line partially constituting the crosshairs superimposed on a first line segment of a second marker.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.