A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

Provided is a bonding apparatus including a bonding stage 83 for heating a substrate (lead frame) 61 placed on the upper surface thereof or a semiconductor die 63 mounted on the substrate (lead frame) 61, an imaging device 20 arranged above the bonding stage 83 to image the substrate 61 placed on the bonding stage 83 or the semiconductor die 63 mounted on the substrate 61, and a standing wave generating device 35 for generating an ultrasonic standing wave in the space between the upper surface of the bonding stage 83 and the imaging device 20. This improves the accuracy of image position detection by the imaging device with a simple structure.

There is provided a capillary transport device capable of inserting, without manpower, a capillary into a mounting section of an ultrasonic horn. According to an aspect of the present invention, a capillary transport device includes: a first tube 17 for transporting a capillary 13; an ultrasonic horn 11 with a mounting section for mounting the capillary; a first movement mechanism for relatively moving the ultrasonic horn and a first end 17a of the first tube; and a mechanism for blowing gas into a second end 17b of the first tube.

A wire bonding apparatus of an aspect includes: a clamp apparatus, having a pair of arms; a stage, moving the clamp apparatus in a horizontal direction; a rod member; a contact detection part, detecting contact between the rod member and the clamp apparatus; and a control apparatus, controlling opening and closing of the pair of arms and an operation of the stage and acquiring position information of the clamp apparatus. The control apparatus obtains an opening amount of the pair of arms based on position information of the clamp apparatus at a time when an outer side surface of a first arm contacts the rod member in a state where the pair of arms are closed and position information of the clamp apparatus at the time when the outer side surface of the first arm contacts the rod member in a state where the pair of arms are open.

An apparatus for the formation of a wire loop comprises a wire drive for advancing a wire and a loop layer to grip a first end of the wire and to lay a wire loop. When the wire is advanced, the wire loop is formed into a selected size. The apparatus also includes a pull-out gripper and a sensor device, the pull-out gripper being configured to grasp the wire of the wire loop and, after grasping the wire of the wire loop, move relative to the loop layer, thereby tensioning the wire loop in a longitudinal direction. The sensor device can detect a twist in the wire loop.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

To provide a wire bonding apparatus, which is insusceptible to a bonding state at a second bonding point due to a wire cut error or the like, or to members such as a capillary and a wire, and is capable of automatically protruding the wire from a leading end of the capillary, provided is a wire bonding apparatus including: a capillary (6) having a through hole through which a wire (40) is to be inserted; a holding unit, which is provided above the capillary (6), and is configured to hold the wire (40) inserted through the capillary (6); and a vibrating unit configured to vertically vibrate the capillary (6). Under a state in which the holding unit holds the wire (40), the vibrating unit vertically vibrates the capillary (6) so that the wire (40) is protruded from the leading end of the capillary.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.