A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A semiconductor device includes a carrier, a chip attached to the carrier, a sealant vapor deposited over the chip and the carrier, and encapsulation material deposited over the sealed chip and the sealed carrier.

A semiconductor device includes a carrier, a chip attached to the carrier, a sealant vapor deposited over the chip and the carrier, and encapsulation material deposited over the sealed chip and the sealed carrier.

A high-voltage energy storage module for supplying a voltage, in particular to a motor vehicle, includes at least two storage cells and at least one electrically conductive connection between two poles of different storage cells. The individual connection consists of multiple adjacently arranged bonding wires, and each bonding wire is secured to the two poles by means of a wire bonding.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

The invention is directed to firm bonding between semiconductor dies etc bonded to a lead frame and wire-bonding portions of the lead frame by ultrasonic Al wire bonding, and the prevention of shortcircuit between the semiconductor dies etc due to a remaining portion of the outer frame of the lead frame after the outer frame is cut. By extending the wire-bonding portion etc on the lead frame in a wire-bonding direction and connecting the wire-bonding portion etc to the outer frame of the lead frame through a connection lead etc, the ultrasonic vibration force in the ultrasonic Al wire bonding is prevented from dispersing and the Al wire and the wire-bonding portion etc are firmly bonded. The outer frame is cut after a resin sealing process is completed. Even when a portion of the outer frame remains on the side surface of the resin package, connection between the connection lead etc and other hanging lead etc are prevented by providing a notch etc in the outer frame between the connection lead etc and the hanging lead etc.

The invention is directed to firm bonding between semiconductor dies etc bonded to a lead frame and wire-bonding portions of the lead frame by ultrasonic Al wire bonding, and the prevention of shortcircuit between the semiconductor dies etc due to a remaining portion of the outer frame of the lead frame after the outer frame is cut. By extending the wire-bonding portion etc on the lead frame in a wire-bonding direction and connecting the wire-bonding portion etc to the outer frame of the lead frame through a connection lead etc, the ultrasonic vibration force in the ultrasonic Al wire bonding is prevented from dispersing and the Al wire and the wire-bonding portion etc are firmly bonded. The outer frame is cut after a resin sealing process is completed. Even when a portion of the outer frame remains on the side surface of the resin package, connection between the connection lead etc and other hanging lead etc are prevented by providing a notch etc in the outer frame between the connection lead etc and the hanging lead etc.