A method of forming a semiconductor package includes attaching a first package component to a first carrier; attaching a second package component to the first carrier, the second package component laterally displaced from the first package component; attaching a third package component to the first package component, the third package component being electrically connected to the first package component; removing the first carrier from the first package component and the second package component; after removing the first carrier, performing a first circuit probe test on the second package component to obtain first test data of the second package component; and comparing the first test data of the second package component with prior data of the second package component.

A method of forming a semiconductor package includes attaching a first package component to a first carrier; attaching a second package component to the first carrier, the second package component laterally displaced from the first package component; attaching a third package component to the first package component, the third package component being electrically connected to the first package component; removing the first carrier from the first package component and the second package component; after removing the first carrier, performing a first circuit probe test on the second package component to obtain first test data of the second package component; and comparing the first test data of the second package component with prior data of the second package component.

A semiconductor package includes a semiconductor chip including a second bonding insulating layer surrounding at least a portion of each of a first bonding pad structure and a second bonding pad structure, in which the first bonding pad structure includes a first contact portion, a first bonding pad, and a first seed layer disposed between the first bonding pad and the first contact portion and extending in a first direction, the second bonding pad structure includes a second contact portion, a second bonding pad, and a second seed layer disposed between the second bonding pad and the second contact portion and extending in the first direction, and the second bonding insulating layer is in contact with a side surface of each of the first and second seed layers and the first and second bonding pads.

A semiconductor package includes a semiconductor chip including a second bonding insulating layer surrounding at least a portion of each of a first bonding pad structure and a second bonding pad structure, in which the first bonding pad structure includes a first contact portion, a first bonding pad, and a first seed layer disposed between the first bonding pad and the first contact portion and extending in a first direction, the second bonding pad structure includes a second contact portion, a second bonding pad, and a second seed layer disposed between the second bonding pad and the second contact portion and extending in the first direction, and the second bonding insulating layer is in contact with a side surface of each of the first and second seed layers and the first and second bonding pads.

Provided is a three-dimensional storage device using wafer-to-wafer bonding. A storage device includes a first chip including a first substrate and a peripheral circuit region including a first control logic circuit configured to control operation modes of the non-volatile memory device and a second chip including a second substrate and three-dimensional arrays of non-volatile memory cells. The second chip may be vertically stacked on the first chip so that a first surface of the first substrate faces a first surface of the second substrate, and a second control logic circuit is configured to control operation conditions of the non-volatile memory device and is arranged on a second surface of the second substrate, the second surface of the second substrate being opposite to the first surface of the second substrate of the second chip.

Provided is a three-dimensional storage device using wafer-to-wafer bonding. A storage device includes a first chip including a first substrate and a peripheral circuit region including a first control logic circuit configured to control operation modes of the non-volatile memory device and a second chip including a second substrate and three-dimensional arrays of non-volatile memory cells. The second chip may be vertically stacked on the first chip so that a first surface of the first substrate faces a first surface of the second substrate, and a second control logic circuit is configured to control operation conditions of the non-volatile memory device and is arranged on a second surface of the second substrate, the second surface of the second substrate being opposite to the first surface of the second substrate of the second chip.

A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.