A memory array and single-crystal circuitry are provided by wafer bonding (e.g., adhesive wafer bonding or anodic wafer bonding) in the same integrated circuit and interconnected by conductors of a interconnect layer. Additional circuitry or memory arrays may be provided by additional wafer bonds and electrically connected by interconnect layers at the wafer bonding interface. The memory array may include storage or memory transistors having single-crystal epitaxial silicon channel material.

A method includes providing a structure including a carrier wafer, and a first device wafer with an adhesion layer between the carrier wafer and the first device wafer; and forming a plurality of first ablation structures in the structure, each of the plurality of first ablation structures extending through the first device wafer, the adhesion layer and a portion of the carrier wafer. Each of the plurality of first ablation structures has a portion inside the carrier wafer with a depth no greater than one half of a thickness of the carrier wafer. The first device wafer includes a plurality of first dies, each pair of adjacent first dies being separated by one of the plurality of first ablation structures. The plurality of first ablation structures are formed by either laser grooving or mechanical sawing.

A method includes providing a structure including a carrier wafer, and a first device wafer with an adhesion layer between the carrier wafer and the first device wafer; and forming a plurality of first ablation structures in the structure, each of the plurality of first ablation structures extending through the first device wafer, the adhesion layer and a portion of the carrier wafer. Each of the plurality of first ablation structures has a portion inside the carrier wafer with a depth no greater than one half of a thickness of the carrier wafer. The first device wafer includes a plurality of first dies, each pair of adjacent first dies being separated by one of the plurality of first ablation structures. The plurality of first ablation structures are formed by either laser grooving or mechanical sawing.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

A semiconductor device and a method for forming a semiconductor are provided. The semiconductor device includes: a first substrate, a first conductive line disposed on the first substrate, a second substrate opposite to the first substrate, a second conductive line disposed on the second substrate and adjacent to the first conductive line, and a plurality of bonding structures between the first conductive line and the second conductive line. The first conductive line includes a plurality of first segments separated from one another. The second conductive line includes a plurality of second segments separated from one another. Each of the bonding structures is connected to a respective first segment of the plurality of first segments and a respective second segment of the plurality of second segments such that the plurality of first segments, the plurality of bonding structures and the plurality of second segments are connected in series.

A semiconductor device and a method for forming a semiconductor are provided. The semiconductor device includes: a first substrate, a first conductive line disposed on the first substrate, a second substrate opposite to the first substrate, a second conductive line disposed on the second substrate and adjacent to the first conductive line, and a plurality of bonding structures between the first conductive line and the second conductive line. The first conductive line includes a plurality of first segments separated from one another. The second conductive line includes a plurality of second segments separated from one another. Each of the bonding structures is connected to a respective first segment of the plurality of first segments and a respective second segment of the plurality of second segments such that the plurality of first segments, the plurality of bonding structures and the plurality of second segments are connected in series.

The present disclosure relates to a radio frequency device that includes a transfer device die and a multilayer redistribution structure underneath the transfer device die. The transfer device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion and a transfer substrate. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. A top surface of the device region is planarized. The transfer substrate resides over the top surface of the device region. Herein, silicon crystal does not exist within the transfer substrate or between the transfer substrate and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the transfer device die.

The present disclosure relates to a radio frequency device that includes a transfer device die and a multilayer redistribution structure underneath the transfer device die. The transfer device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion and a transfer substrate. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. A top surface of the device region is planarized. The transfer substrate resides over the top surface of the device region. Herein, silicon crystal does not exist within the transfer substrate or between the transfer substrate and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the transfer device die.

An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.