A semiconductor package is provided. The semiconductor package may include a first semiconductor die, a second semiconductor die stacked on the first semiconductor die, the second semiconductor die having a width smaller than a width of the first semiconductor die, a third semiconductor die stacked on the second semiconductor die, the third semiconductor die having a width smaller than the width of the first semiconductor die, and a mold layer covering side surfaces of the second and third semiconductor dies and a top surface of the first semiconductor die. The second semiconductor die may include a second through via, and the third semiconductor die may include a third conductive pad in contact with the second through via.

A semiconductor package is provided. The semiconductor package may include a first semiconductor die, a second semiconductor die stacked on the first semiconductor die, the second semiconductor die having a width smaller than a width of the first semiconductor die, a third semiconductor die stacked on the second semiconductor die, the third semiconductor die having a width smaller than the width of the first semiconductor die, and a mold layer covering side surfaces of the second and third semiconductor dies and a top surface of the first semiconductor die. The second semiconductor die may include a second through via, and the third semiconductor die may include a third conductive pad in contact with the second through via.

A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.

A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

A method is provided for localised deposition of a material over an element, including deposition of a portion of the material over a portion of a surface of a support; positioning of a portion of the element against the portion of the material; annealing of the material portion increasing, at the end of the treatment, the adhesion force of the material against the portion of the element, the materials of the portion of the element and of the portion of the surface of the support being selected such that the adhesion of the material against the portion of the element is, at the end of the annealing, higher than that of the material against the portion of the surface of the support; and separation of the element and the support at the interface between the material and the portion of the surface of the support, the material remaining secured to the portion of the element.

A method is provided for localised deposition of a material over an element, including deposition of a portion of the material over a portion of a surface of a support; positioning of a portion of the element against the portion of the material; annealing of the material portion increasing, at the end of the treatment, the adhesion force of the material against the portion of the element, the materials of the portion of the element and of the portion of the surface of the support being selected such that the adhesion of the material against the portion of the element is, at the end of the annealing, higher than that of the material against the portion of the surface of the support; and separation of the element and the support at the interface between the material and the portion of the surface of the support, the material remaining secured to the portion of the element.

The laser reflow apparatus of the present invention comprises a laser pressurization head module for pressing a bonding object, which includes a plurality of electronic components arranged on a substrate by a transmissive pressurization member while irradiating a laser beam through the pressurization member, to bond the electronic components to the substrate; and a bonding object transfer module for transferring the bonding object having transferred from one side of the laser pressurization head module to carry the bonding object to the other side thereof after passing through a reflow process of the laser pressurized head module.

Embodiments disclosed herein include multi-die modules and methods of assembling multi-die modules. In an embodiment, a multi-die module comprises a first die. In an embodiment the first die comprises a first pedestal, a plateau around the first pedestal, and a stub extending up from the plateau. In an embodiment, the multi-die module further comprises a second die. In an embodiment, the second die comprises a second pedestal, where the second pedestal is attached to the first pedestal.