There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.

A semiconductor device structure includes a silicon layer disposed over a first semiconductor die, and a first mask layer disposed over the silicon layer. The semiconductor device structure also includes a second semiconductor die disposed over the first mask layer, and a through silicon via penetrating through the silicon layer and the first mask layer. A bottom surface of the through silicon via is greater than a top surface of the through silicon via, and the top surface of the through silicon via is greater than a cross-section of the through silicon via between and parallel to the top surface and the bottom surface of the through silicon via.

A semiconductor device structure includes a silicon layer disposed over a first semiconductor die, and a first mask layer disposed over the silicon layer. The semiconductor device structure also includes a second semiconductor die disposed over the first mask layer, and a through silicon via penetrating through the silicon layer and the first mask layer. A bottom surface of the through silicon via is greater than a top surface of the through silicon via, and the top surface of the through silicon via is greater than a cross-section of the through silicon via between and parallel to the top surface and the bottom surface of the through silicon via.