A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.

Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.

A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming, over the first insulating film, a second insulating film to cover the pad therewith, forming an opening in the second insulating film, and electrically coupling a copper wire to the pad exposed from the opening.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming, over the first insulating film, a second insulating film to cover the pad therewith, forming an opening in the second insulating film, and electrically coupling a copper wire to the pad exposed from the opening.

An integrated circuit includes a bottom substrate, a metal layer disposed over the bottom substrate and a hollow metal pillar disposed on the metal layer. The metal layer and the hollow metal pillar are electrically connected.

An integrated circuit includes a bottom substrate, a metal layer disposed over the bottom substrate and a hollow metal pillar disposed on the metal layer. The metal layer and the hollow metal pillar are electrically connected.

An integrated circuit includes a bottom substrate, a metal layer disposed over the bottom substrate and a hollow metal pillar disposed on the metal layer. The metal layer and the hollow metal pillar are electrically connected.