Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.

Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.

An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.

An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.